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HPMX-3002

HPMX-3002

  • 厂商:

    HP

  • 封装:

  • 描述:

    HPMX-3002 - Silicon Bipolar RFIC 900 MHz Driver Amplifier - Agilent(Hewlett-Packard)

  • 数据手册
  • 价格&库存
HPMX-3002 数据手册
Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation • S0-8 Surface Mount Package with Improved Heatsinking Plastic S0-8 Package Description Hewlett-Packard’s HPMX-3002 is a silicon microwave monolithic integrated circuit driver amplifier housed in a S0-8 surface mount plastic package. It operates over the 150 - 960 MHz frequency range, and at 900 MHz it produces +23 dBm of saturated output power, has 30 dB of small signal gain and a 50 dB power control range. The amplifier has a wellmatched input, and an open collector output which provides good linearity and efficiency and is easy to externally match to 50 Ω for optimal power output. This device is well suited as a driver amplifier for European GSM (Global System for Mobile communications) portable and mobile telephone systems, or as the output stage for other low cost applications such as 900 MHz ISM band spread-spectrum. The HPMX-3002 is fabricated with Hewlett-Packard’s 15 GHz ft ISOSAT-II process, which combines stepper lithography, ion implantation, self-alignment techniques, and gold metallization to produce RFICs with superior performance, uniformity and reliability . Pin Configuration Applications • Driver Amplifier for GSM Cellular Handsets • Driver or Output Stage for 900 MHz ISM Band Transmitters • Driver or Output Stage for Transmitters Operating in the 150-960 MHz Range GROUND AND THERMAL CONTACT VCC1 GROUND RFIN 1 2 3 4 8 7 6 5 GROUND AND THERMAL CONTACT RFOUT AND VCC2 POWER CONTROL Functional Block Diagram (2) VCC1 (1ST AND 2ND STAGES) (4) RFIN (6) RFOUT AND VCC2 (3RD STAGE BIAS, OPEN COLLECTOR) (1, 3, 7, 8) GROUND (5) POWER CONTROL 5965-9661E 6-76 HPMX-3002 Absolute Maximum Ratings Symbol Pdiss Pin VCC[1] VCC[2] Vcont Tj TSTG Parameter Power Dissipation[2,3] Input Power Supply Voltage Supply Voltage, 3rd Stage Control Voltage Junction Temperature Storage Temperatuere Units mW dBm V V V °C °C Absolute Maximum[1] 1400 + 5 8 12 5 150 -65 to 150 Thermal Resistance[2]: Θjc = 66°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Tc = 25 °C (Tc is defined to be the temperature at the ends of pin 7 where it contacts the circuit board). 3. Derate at 15.2 mW/°C for TC > 58°C. HPMX-3002 Guaranteed Electrical Parameters, TC = 37°C, ZO = 50 Ω VCC1 = 4.5 V, VCC2 = 6 V, PIN = - 6 dBm @ 900 MHz, output matched for maximum power ICC1 = 65 mA nom., ICC2 = 95 mA nom. set by Vcont (pin 5) = 2.2 V (unless otherwise noted). Symbol Pout PCR ICC 1 ICC 2 Parameters and Test Conditions Output Power Power Control Range Driver Stages Current Output Stage Current PIN = -6 dBm, f = 900 MHz f = 900 MHz, Vcont = 0 to 2.2 V VCC 1 = 4.5 V VCC 2 = 6 V Units dBm dBm mA mA Min. 22 40 Typ. 23 50 65 95 75 120 Max. HPMX-3002 Summary Characterization Information, TC = 37°C, ZO = 50 Ω VCC1 = 4.5 V, VCC2 = 6 V, Pin = - 6 dBm @ 900 MHz, output matched for maximum power ICC1 = 65 mA nom., ICC2 = 95 mA nom. set by Vcont (pin 5) = 2.2 V (unless otherwise noted). Symbol P1dB Gss IP3 IP5 NF VSWR in Icont Parameters and Test Conditions Output Power at 1 dB Gain Compression Small Signal Gain Third Order Intercept Point Fifth Order Intercept Point Noise Figure Input Voltage Standing Wave Ratio Control Current Vcont = 0 to 2.2V PIN set for Pout = P 1 dB, f = 900 MHz f = 900 MHz, Pin = -18 dBm f1 = 900 MHz, f2 = 901 MHz Pout per tone = 12 dBm f1 = 900 MHz, f2 = 901 MHz Pout per tone = 12 dBm Units dBm dB dBm dBm dB mA Typ. 22 32 29 24 9.5 1.5:1 2.5 6-77 HPMX-3002 Pin Description Ground (pins 1,3,7,8): This RFIC is ground sensitive. A short path to ground with minimal parasitics must be provided on all ground leads to prevent stability problems. The PC board should be 0.032" or less in thickness. Multiple vias should be placed near the ground leads. Failure to properly ground this device can lead to positive return gain and possible stability problems. We suggest performing a stability analysis using the device s parameters and a description of the inductance of your ground path. A recommended board layout is shown on the final page of this data sheet. Pins 7 and 8 also provide the primary thermal path for heatsinking the device. VCC1 (pin 2): This pin provides the DC bias for the amplifier driver stages, and has an operating range of 4.5 to 6 V (5 V nominal). It should be bypassed close to RFIC body using a 1000 pF capacitor. RFin (pin 4): The impedance of this RFIC is well matched to 50 Ω from 100 MHz to 1100 MHz. Normally, no additional impedance matching is required. S-parameters are provided should the designer need to “fine tune” the input match. Pin 4 must be AC coupled to generator (1000 pF typ. blocking capacitor). The nominal drive level is -6 dBm, and under normal operating conditions should not exceed 0 dBm. Control (pin 5): Applying a DC voltage to this pin adjusts the gain of the last 2 stages of the RFIC over a 50 dB range. Pin 5 has an operational range of 0 to 2.5 V. The power control function is designed for operation in the 800 - 1000 MHz frequency range, and decreases in adjustment capability at lower frequencies – refer to the performance graphs (figure 3). RFout and VCC2 (Pin 6): Pin 6 connects to the open collector of the output stage. A power match is required at this pin. The typical match for operation between 800 and 1000 MHz consists of a shunt L (8 nH typ.) and a series C (27 pF typ.), with the series C also serving as the blocking capacitor. The s parameter data should be used to generate matches for other frequency bands. 27 pF RFOUT (50 Ω) 8 nH VCC2 (4 TO 8 V, 95 mA NOM.) 1000 pF OUTPUT POWER CONTROL VOLTAGE (2.2 V, 2.5 mA TYP.) 8 7 6 5 PIN: 1 2 3 4 TRANSMISSION LINES ARE 50 Ω VCC1 (4 TO 6 V, 65 mA NOM.) 1000 pF 1000 pF RFIN (50 Ω) Figure 1. HPMX-3002 Typical 900 MHz Amplifier Use. 6-78 HPMX-3002 Typical Performance, TC = 37°C, ZO = 50 Ω Pin = -6 dBm @ 900 MHz, VCC1 = 4.5 V, VCC2 = 6 V, Vcontrol = 2.2 V, ICC1 = 66 mA, ICC2 = 95 mA nom. Output matched for max. Pout @ 900 MHz (unless otherwise noted) 25 +85 23 +37 -40 CURRENT (mA) POUT (dBm) 150 POUT 30 20 130 10 2.2 V 2.0 V 1.8 V 1.6 V 1.4 V 1.2 V 30 POUT 20 10 POUT (dBm) 140 120 +37 -40 ICC2 +85 100 +37 -40 80 +85 +37 60 -40 ICC1 40 20 0 2.5 +85 21 ICC2 19 +85 110 0 -10 -20 1.0 V 0.8 V 0.6 V 0.4 V 0.2 V 0 200 400 600 800 1000 0 -10 -20 -30 -40 0 0.5 1 1.5 2 CONTROL VOLTAGE (V) +37 90 -40 +85 ICC1 +37 -40 200 400 600 800 50 1000 17 70 -30 -40 FREQUENCY (MHz) 15 0 FREQUENCY (MHz) Figure 2. HPMX-3002 Output Power and Current vs. Frequency and Temperature. 25 VCC2 8V 24 7V Figure 3. HPMX-3002 Output Power vs. Frequency and Control Voltage. Figure 4. HPMX-3002 Output Power and Current vs. Control Voltage and Temperature. 18 100 +85 +37 5.5 V 16 5.0 V 80 NOISE FIGURE (dB) CURRENT (mA) 6V POUT (dBm) 23 5V 60 ICC1 40 +85 20 +37 -40 -40 ICC2 14 4.5 V 22 12 21 10 20 4.5 4.7 4.9 5.1 5.3 5.5 0 -40 -30 -20 -10 0 10 20 30 8 0 200 400 600 800 1000 FREQUENCY (MHz) VCC1 (V) POUT (dBm) Figure 5. HPMX-3002 Output Power vs. Supply Voltage. Figure 6. HPMX-3002 Current vs. Output Power and Temperature. Figure 7. HPMX-3002 Noise Figure vs. Frequency and VCC1 . 40 24 -30 IM3 INTERMODULAITON (dBc) -30 5.5 V INTERMODULAITON (dBc) S21 35 GAIN (dB) -40 IM3 -40 +37 -40 5.0 V 4.5 V -40 +37 +85 +37 23 P1dB (dBm) -50 +85 IM5 IM5 -50 -60 30 -40 +85 P1dB 22 -40 +37 5.0 V 4.5 V 5.5 V -70 +85 25 840 880 920 21 960 -80 4 6 8 10 12 14 POUT PER TONE (dBm) -60 1.8 1.9 2 VCONTROL (V) 2.1 2.2 FREQUENCY (MHz) Figure 8. HPMX-3002 one dB Compressed Power and Small Signal Gain vs. Frequency and Temperature. Figure 9. HPMX-3002 Intermodulation Distortion vs. Output Power and Temperature with Vcontrol = 2.0 V. Figure 10. HPMX-3002 Intermodulation Distortion vs. Control Voltage and VCC1 for Pout per tone = 12 dBm. 6-79 CURRENT (mA) POUT (dBm) 0 0 150 10 10 120 ICC1 CURRENT (mA) RETURN LOSS (dB) 20 RETURN LOSS (dB) 90 ICC2 60 20 30 30 40 30 50 0 200 400 600 800 1000 FREQUENCY (MHz) 40 0 200 400 600 800 1000 FREQUENCY (MHz) 0 0 200 400 600 800 1000 VCC2 (VOLTS) Figure 11. HPMX-3002 Input Return Loss vs. Frequency. Figure 12. HPMX-3002 Output Return Loss vs. Frequency. Figure 13. HPMX-3002 Stage Current vs. Supply Voltage with VCC1 = 4.5 V. VCC1 = 4.5 V 1000 pF VCC2 = 6 V PIN: 1 2 3 1000 pF PIN = -6 dBm ALL TRANSMISSION LINES ARE 50 Ω 4 5 8 7 6 BIAS TEE 3 nH 1.8 pF RFOUT (50 Ω) VCONTROL = 2.2 V 1000 pF Figure 14. HPMX-3002 Test Circuit Configuration. 6-80 HPMX-3002 Typical Scattering Parameters, TC = 37°C, ZO = 50 Ω VCC1 = 4.5 V, VCC2 = 6 V Freq GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 S11 Mag 0.33 0.34 0.31 0.31 0.29 0.23 0.09 0.06 0.16 0.19 0.21 Ang 151 92 51 18 -14 -52 -117 66 42 11 6 dB 42.89 44.16 42.95 42.06 41.91 42.12 41.62 38.19 34.23 29.87 26.42 S21 Mag 139.44 161.44 140.50 126.79 124.61 127.67 120.47 81.23 51.44 31.15 20.93 Ang -138 143 98 63 29 -10 -60 -106 -144 -169 -165 dB -60.00 -53.98 -53.98 -47.96 -44.44 -40.92 -38.42 -37.08 -35.92 -33.98 -32.40 S12 Mag 0.001 0.002 0.002 0.004 0.006 0.009 0.012 0.014 0.016 0.020 0.024 Vcontrol = 1.6 V S22 k Ang -25 -53 -67 -76 -89 -107 -136 -162 -179 -170 -164 0.77 0.82 1.10 0.77 0.65 0.62 0.73 0.84 0.94 1.04 1.14 Ang 143 152 146 148 141 143 138 135 131 130 127 Mag 0.91 0.75 0.65 0.65 0.73 0.85 0.88 0.65 0.41 0.31 0.25 HPMX-3002 Typical Scattering Parameters, TC = 37°C, ZO = 50 Ω VCC1 = 4.5 V, VCC2 = 6 V Freq GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 S11 Mag 0.33 0.31 0.28 0.27 0.25 0.19 0.05 0.09 0.17 0.19 0.21 Ang 143 83 43 11 -21 -63 -144 61 38 12 6 dB 45.90 45.15 43.46 42.43 42.15 42.13 41.26 37.86 34.07 29.89 26.54 S21 Mag 197.18 180.94 148.88 132.22 128.14 127.82 115.62 78.15 50.54 31.23 21.22 Ang -158 128 88 55 22 -17 -64 -107 -144 -168 166 dB -60.00 -60.00 -53.98 47.96 -44.44 -41.94 -39.17 -37.72 -35.92 -33.98 -32.40 S12 Mag 0.001 0.001 0.002 0.004 0.006 0.008 0.011 0.013 0.016 0.020 0.024 Vcontrol = 2.0 V S22 k Ang -31 -56 -65 -74 -88 -108 -138 -161 -178 -169 -164 0.85 1.78 1.26 0.87 0.67 0.61 0.73 0.86 0.95 1.04 1.14 Ang 153 99 142 138 147 143 135 135 131 132 127 Mag 0.85 0.63 0.56 0.60 0.70 0.80 0.81 0.59 0.39 0.30 0.24 6-81 HPMX-3002 Typical Scattering Parameters, TC = 37°C, ZO = 50 Ω VCC1 = 4.5 V, VCC2 = 6 V Freq GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 S11 Mag 0.26 0.18 0.15 0.12 0.08 0.02 0.13 0.19 0.23 0.24 0.24 Ang 122 67 30 -1 -30 -112 92 51 34 11 4 dB 46.64 43.80 41.76 40.36 39.64 39.17 38.03 35.15 32.04 28.44 25.49 S21 Mag 214.70 154.92 122.46 104.17 95.89 90.91 79.70 57.23 39.99 26.42 18.82 Ang 160 99 65 38 6 -29 -71 -109 -142 -168 166 dB -60.00 -60.00 -53.98 -50.46 -44.44 -41.94 -40.00 -37.72 -35.92 -34.43 -32.77 S12 Mag 0.001 0.001 0.002 0.003 0.006 0.008 0.010 0.013 0.016 0.019 0.023 Vcontrol = 2.2 V S22 k Ang -30 -33 -40 -52 -68 -89 -114 -131 -143 -139 -137 1.70 2.53 1.64 1.22 0.79 0.70 0.75 0.88 0.99 1.11 1.15 Ang 111 133 139 149 148 142 137 135 134 132 129 Mag 0.58 0.49 0.52 0.59 0.66 0.71 0.65 0.50 0.34 0.29 0.34 Part Number Ordering Information Part Number HPMX-3002 HPMX-3002 Option #T10 No. of Devices 100 1000 5.00 (0.197) 4.80 (0.188) Container Tube Reel Package Dimensions S0-8 Package 8 7 6 5 4.00 (0.158) 3.80 (0.150) 6.20 (0.244) 5.80 (0.228) PIN: 1 2 3 4 0.20 (0.008) 0.10 (0.004) 0.45 (0.018) 0.35 (0.014) 1.27 (0.050) TYP 5.20 (0.205) 4.60 (0.181) 1.75 (0.069) 1.35 (0.053) 0.77 (0.030) 0.64 (0.025) 0 DEG MIN 8 DEG MAX 0.254 (0.010) 0.15 (0.007) NOTE: DIMENSIONS ARE IN MILLIMETERS (INCHES). 6-82 HPMX-3002 Test Board Layout OUT POWER CONTROL OUT POWER CONTROL C VCC2 L IC 1 C C VCC2 C C H IN HPMX-3002 VCC1 1 H IN HPMX-3002 VCC1 Finished board size: 1.5" x 1.5" x 1/32" Material: 1/32" epoxy/fiberglass, 1 oz. copper, both sides, tin/lead coating, both sides. Note: “.” marks indicate drilling locations for plated-through via holes to the groundplane on the bottom side of the board. Board layed out for coil-craft #AO3T 8 nH spring-coil inductor. 6-83
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