IAM-93516-TR1

Agilent IAM-93516 High Linearity Integrated GaAs Mixer Data Sheet Description Agilent Technologies’s IAM93516 is a high linearity GaAs FET Mixer using 0.5um enhancement mode pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 has a built-in LO buffer amplifier and an IF amplification stage that serve as an ideal solution for reducing board space and delivering excellent high IIP3, gain and isolation with a low LO drive power. The device is designed with a differential configuration to provide good noise immunity. The LO port is 50 ohm matched and can be driven differential or single ended. An interstage match is introduced between the mixer and amplifier stage to allow device tuning at the desired RF and LO frequency. The interstage match can be a simple low pass, high pass or intermediate frequency trap. The amplifier output port is 200 ohm matched and fully differential. The simple matching at the RF port provides for optimum input return loss, noise figure and IIP3 performance. The IAM-93516 is ideally suited for frequency down conversion for base station radio card receiver, microwave link receiver, MMDS, modulation and demodulation for receiver and general purpose resistive FET mixer, which require high linearity. All devices are 100% RF and DC tested. Applications • Frequency down converter for base station radio card, microwave link transceiver, and MMDS • Modulation and demodulation for receiver • General purpose resistive FET mixer for other high linearity applications Features • DC =5V @ 111mA (Typ.) • RF =1.91 GHz, PinRF = -10 dBm; • LO =1.7 GHz, PinLO = 0 dBm; • IF = 210 MHz unless otherwise specified • High Linearity: 23.1 dBm IIP3(typ) • Conversion Gain: 9.4 dB typical • Low Noise Figure: 11.6 dB • Wide band operation: • 400-3000 MHz RF & LO input • 70 – 300 MHz IF output • Fully differential or single ended operation • High P1dB: 19.3 dB typical • Consistent RF performance over LO Power • Low current consumption: 5V@ 111mA typical • Excellent uniformity in product specifications • 3mm x 3mm x 0.9mm LPCC package • MTTF > 300 years[1] • MSL-1 and Lead-free. Pin Connections and Package Marking Interstage Match +VDD 5 MIX_OUT+ 3 2 RF+ 1 IFA_IN+ +VDD 14 6 LO+ LO Buffer 2 LO 7 Mixer 3pF MIX_OUT 11 RF - 12 IFA_IN 280 ohm 3pF Amplifier IF+ 16 13 IF - 10 Top View Note: Package marking provides orientation and identification “M2” = Device Code “X” = Month code indicates the month of manufacture Interstage Match 1.0 Absolute Maximum Ratings [1] Symbol VD PinRF PinLO TCH TSTG θch_b Parameter Supply Voltage [2] CW RF Input Power CW LO Input Power Storage Temperature Thermal Resistance [4] [2] [2] Units V dBm dBm °C °C °C/W Absolute maximum 7 30 18 150 -65 to 150 39 Channel Temperature Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Determined at DC quiescent conditions and TA = 25°C. 3. Board (package belly) temperature TB is 25°C. Derate 25 mW/°C for TB > 130 °C. 4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150o C Liquid Crystal Measurement method. 2.0 Product Consistency Distribution Charts [5,6] 400 Stdev=0.74 180 150 Stdev = 0.14 frequency 180 150 Stdev = 0.5 120 -3 Std + 3 Std frequency 300 frequency 120 90 60 30 200 -3 Std +3 Std 90 60 30 0 -3 Std +3 Std 100 0 107 108 109 110 Id 111 112 113 114 0 8.8 9.0 9.2 9.4 9.6 9.8 21 22 23 24 25 Figure 1. ID (mA) [7] Nominal = 111.2mA Figure 2. GAIN (dB) [8] Nominal = 9.4dB Figure 3. IIP3 (dBm) [8] Nominal = 23.1dBm 2 3.0 IAM-93516 Electrical Specifications[6,8] TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz, PinLO = 0dBm (unless otherwise specified) Symbol Id [7] Parameter and Test Condition Device Current Conversion Gain Output Third Order Intercept Point SSB Noise Figure Output Power at 1dB Gain Compression RF Port Return Loss LO Port Return Loss IF Port Return Loss LO-RF Isolation LO-IF Isolation RF-IF Isolation Units mA dB dBm dB dBm dB dB dB dB dB dB Min. 95.0 7.9 20.5 - Typ. 111.2 9.4 23.1 11.6 19.3 12.0 20.0 11.0 26.0 20.0 32.0 Max. 125.0 10.9 - GC IIP3 [8] NF P1dB RLRF RLLO RLIF ISOLL-R ISOLL-I ISOLR-L Notes: 5. Distribution data sample size is 510 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements were made on a production test board, which represents a trade-off between optimal Gain, IIP3, NF, P1dB and isolation. Board losses of 0.1dB at the RF input and IF amplifier output have been compensated. Balun loss of 0.57dB which was obtained from the Toko’s supplied sparameter file is also compensated. The total IF amplifier output loss is 0.67dB. 7. The device current is measured without LO signal. At LO=0dBm, the current reduces by around 6 to 7mA. 8. Gain, P1dB, isolation and return loss test conditions: FRF =1.91GHz, FLO = 1.7GHz, FIF = 210MHz, PinRF = -10dBm, PinLO = 0dBm. IIP3 test condition: FRF1 = 1.91GHz, FRF2 = 1.89GHz, FLO = 1.7GHz, PinRF = -10dBm, PinLO = 0dBm. 4.0 IAM-93516 Typical Performance[9,10] TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz (unless otherwise specified) 1nH 39nH 22 Ohm 18pF 0.4pF LO + 1.5pF Interstage Match 40nH Balun Transformer Toko B4F 617DB-1018 IF 3.3nH 1.5nH RF 1.5pF LO Interstage Match 1nH 39nH 22 Ohm 18pF 1000pF 3.3nH 1000pF 0.4pF 1.5pF 40nH Figure 4. IAM-93516 demoboard schematic optimally tuned at FRF = 1.91GHz and FLO = 1.7GHz 3 130 125 120 115 110 Id (mA) 10 9.8 105 100 95 90 85 80 -14 -12 -10 -8 -6 -4 -2 0 2 25 C 85 C -40 C 4 6 Conversion Gain (dB) 9.6 9.4 9.2 9.0 8.8 -14 -12 -10 -8 -6 -4 -2 LO Power (dBm) 0 2 4 6 25 C - 40 C 85 C LO Power(dBm) Figure 5. Current vs. LO Power and Temperature Figure 6. Conversion Gain vs. LO Power and Temperature 31 29 27 20.5 20 19.5 P1dB (dBm) 19 18.5 18 17.5 17 16.5 6 25 IIP3 (dBm) 23 21 19 17 15 -14 25 C -40 C 85 C -12 -10 -8 -6 -4 -2 0 2 4 25 C - 40 C 85 C -14 -12 -10 -8 -6 -4 -2 0 2 4 6 LO Power (dBm) LO Power (dBm) Figure 7. IIP3 vs. LO Power and Temperature Figure 8. P1dB vs. LO Power and Temperature 25 23 21 19 17 25 C -40 C 85 C 30 25 Isolation_LO_IF (dB) 20 NF (dB) 15 13 11 9 7 5 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 15 25 C 10 -40 C 85 C 5 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 LO Power (dBm) LO Power (dBm) Figure 9. Noise Figure vs. LO Power and Temperature Figure 10. LO-IF Isolation vs. LO Power and Temperature 4 40 35 30 25 20 15 -14 25 C -40 C 85 C 35 30 Isolation_LO_RF (dB) Isolation_RF_IF (dB) 25 20 25 C 15 -40 C 85 C -12 -10 -8 -6 -4 -2 0 2 4 6 10 -14 -12 -10 -8 LO Power (dBm) -6 -4 -2 LO Power(dBm) 0 2 4 6 Figure 11. RF-IF Isolation vs. LO Power and Temperature Figure 12. LO-RF Isolation vs. LO Power and Temperature 12 10 28 27 26 25 IIP3 (dBm) Conversion Gain (dB) 8 6 4 2 0 1.6 24 23 22 21 20 19 LO= -3dBm LO=0dBm LO=3dBm 1.7 1.8 1.9 2 RF Frequency (GHz) 2.1 2.2 LO= -3dBm LO=0dBm LO=3dBm 1.7 1.8 1.9 RF Frequency (GHz) 2.0 2.1 2.2 18 1.6 Figure 13. Conversion Gain vs. RF Frequency and LO Power at fixed IF frequency[11] Figure 14. IIP3 vs. RF Frequency and LO Power at fixed IF frequency [11] 45 40 Isolation_LO_IF (dB) 26 24 22 Isolation_RF_IF (dB) 35 30 25 20 15 1.6 1.7 1.8 1.9 2 2.1 2.2 RF Frequency (GHz) LO=-3dBm LO=0dBm LO=3dBm 20 18 16 14 12 10 1.4 1.5 1.6 1.7 1.8 1.9 2 LO Frequency (GHz) LO= -3dBm LO=0dBm LO=3dBm Figure 15. RF-IF Isolation vs. RF Frequency and LO Power at fixed IF frequency Figure 16. LO-IF Isolation vs. LO Frequency and LO Power at fixed IF frequency 5 32 30 0 -2 -4 Isolation_LO_RF (dB) 28 26 24 22 20 1.4 1.5 1.6 1.7 LO Frequency (GHz) 1.8 1.9 2 LO=-3dBm LO=0dBm LO=3dBm -6 IF_IRL (dB) -8 -10 -12 -14 -16 50 100 150 200 250 300 350 400 450 500 IF Frequency (MHz) Figure 17. LO-RF Isolation vs. LO Frequency and LO Power at fixed IF frequency Figure 18. IF Return Loss vs. IF Frequency 0 5 10 0 -5 -10 LO_IRL (dB) RF_IRL (dB) 0 1 2 3 4 LO Frequency (GHz) 5 6 15 20 25 30 35 -15 -20 -25 -30 1.6 1.7 1.8 1.9 RF Frequency (GHz) 2 2.1 2.2 Figure 19. LO Return Loss vs. LO Frequency Figure 20. RF Return Loss vs. RF Frequency Notes: 9. Results shown are based on Figure 4, which is optimally tuned for optimum conversion loss, IIP3, isolation and noise figure. 10. Balun loss of 0.57 dB @ 210 MHz have been deembedded into the IF Amplifier loss. 11. LO is low side injected for 210MHz IF frequency. 6 5.0 IAM-93516 Typical Harmonic Suppresion Table[12,13] LO Harmonics 0 0 RF Harmonics 1 2 3 4 5 Figure 21. Harmonic Suppresion Table Notes: 12. The harmonic suppression table shows the spurious signals present due to the mixing of the RF and LO at down conversion mode. 13. Test conditions a. RF = 1.91GHz @ -10dBm b. LO = 1.7GHz @ 0 dBm c. RF and LO Intermodulation Harmonics are referenced to the signal level produced by the down converted IF signal at 210MHz at the IF amplifier output d. LO Harmonics are referenced to the signal level of the LO signal at 1.7GHz at the IF amplifier output. 1 0.00 0.00 80.38 >90 >90 >90 2 28.30 57.37 52.71 >90 >90 >90 3 5.59 52.89 79.39 83.75 >90 >90 4 21.33 53.95 >90 >90 >90 >90 5 32.02 59.01 87.51 >90 >90 >90 39.96 79.46 >90 >90 >90 6.0 IAM-93516 Pin Description Pin 1, 12 2, 11 3, 10 4,9, 15 5 6, 7 8 13, 16 14 Name IFA_IN+ / IFA_INRF+ / RFMIX_OUT+ / MIX_OUTGND VDD1 LO+ / LO NC IF + / IFVDD2 Description IF Amplifier inputs. This is the signal output from the Mixer/IF Amplifier interstage match. (See product application note) RF differential signal input. Simple matching is required for good RF return loss. (See product application note) Signal at mixer output.This signal will be fed into the Mixer/IF Amplifier interstage match. (See product application note) Ground connection. For normal operation, all electrical grounds must be connected together. DC Power supply for the mixer circuit. 50 Ohm Local oscillator input. The local oscillator can be driven differential or single ended. No contact. 200 Ohm differential amplifier output. A 4:1 balun is required to convert the differential output to single ended. (See product application note) DC Power supply for the IF amplifier circuit. 7 PCB layout and Stencil Design LPCC 3x3 Package Dimensions D D 2 INDEX AREA (D/2 X E/2) E 2 E D2 D2 2 k e E2 2 E2 e 2 Top View A A1 A3 SEATING PLANE Bottom View Side View PACKAGE REF. A D D2 E E2 e A1 A3 k MIN. 0.80 2.90 1.70 2.90 1.70 0 0.20 1GL 3X3-0.50 NOM. 0.90 3.00 1.80 3.00 1.80 0.50 BSC. 0.02 0.20 REF. MAX. 1.00 3.10 1.90 3.10 1.90 0.05 DIMENSIONS ARE IN MILLIMETERS 8 Device Orientation REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE Tape Dimensions 2.0±0.1 0.3±0.05 1.55±0.05 [1] 4.0±0.1 [2] 1.75±0.1 5.5±0.1 C L [1] 1.6±0.1 3.3±0.1 12.0±0.3 R 0.3 Typical 1.55±0.1 8.0±0.1 3.3±0.1 Note: I. Measured from centerline of sprocket hole to centerline of pocket. II. Cumulative tolerance of 10 sprocket hole is ± 0.20 . III. Measured from centerline of sprocket hole to centerline of pocket. IV. Other material available. V. All dimension in millimeter unless otherwise stated. 9 Part Number Ordering Information Part Number IAM-93516-TR1 IAM-93516-TR2 IAM-93516-BLK No. Of Devices 1000 5000 100 Container 7" Reel 13" Reel Antistatic Bag www.agilent.com/ semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. May 9, 2005 5989-2800EN