IAM81008

Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amp Technical Data IAM-81008 Features • RF-IF Conversion Gain From 0.05– 5 GHz • IF Conversion Gain From DC to 1 GHz • Low Power Dissipation: 65 mW at V CC = 5 V Typical • Single Polarity Bias Supply: VCC = 4 to 8 V • Load-insensitive Performance • Conversion Gain Flat Over Temperature • Low LO Power Requirements: –5 dBm Typical • Low Cost Plastic Surface Mount Package Typical applications include frequency down conversion, modulation, demodulation and phase detection. Markets include fiber-optics, GPS satelite navigation, mobile radio, and battery powered communications receivers. The IAM series of Gilbert multiplierbased frequency converters is fabricated using HP’s 10 GHz, f T, 25 GHz f MAX ISOSAT™-I silicon bipolar process. This process uses nitride self alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Plastic SO-8 Package Pin Configuration GROUND AND THERMAL 1 CONTACT VCC1 GROUND RFIN 2 3 4 8 7 6 5 GROUND AND THERMAL CONTACT RFOUT AND VCC2 POWER CONTROL Description The IAM-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation at RF and LO frequencies less than 50 MHz can be achieved using optional external capacitors to ground. The IAM-81008 is particularly well suited for applications that require load-insensitive conversion and good spurious signal suppression with minimum LO and bias power consumption. Typical Biasing Configuration and Functional Block Diagram Cblock IF Output 1 2 Vee = 0 V 3 4 Cblock Cblock 8 7 6 5 Cblock LO Input Note: No external baluns are required. Optional Low LO Ground Optional Low Frequencies RF Ground VCC = 5 V RF Input 7-119 5965-9107E IAM-81008 Absolute Maximum Ratings Parameter Device Voltage Power Dissipation2,3 RF Input Power LO Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 10 V 300 mW +14 dBm +14 dBm 150°C –65 to 150°C Thermal Resistance: θjc = 80°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 4.4 mW/°C for TC > 82°C. IAM-81008 Part Number Ordering Information Part Number IAM-81008-TR1 Devices Per Reel 1000 Reel Size 7" For more information, see “Tape and Reel Packaging for Semmiconductor Devices”. IAM-81008 Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Vcc = 5 V, ZO = 50 Ω, LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max. GC F3 dBRF F3 dB IF P1 dB IP3 NF VSWR RFif LOif LOrf ICC Conversion Gain RF Bandwidth (GC 3 dB Down) IF Bandwidth (GC 3 dB Down) IF Output Power at 1 dB Gain Compression IF Output Third Order Intercept Point SSB Noise Figure RF Port VSWR LO Port VSWR IF Port VSWR RF Feedthrough at IF Port LO Leakage at IF Port LO Leakage at RF Port Supply Current RF = 2 GHz, LO = 1.75 GHz IF = 250 MHz LO = 2 GHz RF = 2 GHz, LO = 1.75 GHz RF = 2 GHz, LO = 1.75 GHz RF = 2 GHz, LO = 1.75 GHz f = 0.05 to 3.5 GHz f = 0.05 to 3.5 GHz f < 1 GHz RF = 2 GHz, LO = 1.75 GHz LO = 1.75 GHz LO = 1.75 GHz dB GHz GHz dBm dBm dB 6.0 8.5 3.5 0.6 –6 3 17 1.5:1 2.0:1 1.5:1 10 dBc dBm dBm mA 10 –25 –25 –30 13 16 Note: 1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on the following page. 7-120 IAM-81008 Typical Performance, TA = 25°C, VCC = 5 V RF: –20 dBm at 2 GHz, LO: –5 dBm at 1.75 GHz (unless otherwise noted) 15 5 30 15 5 20 ICC IF P1 dB (dBm) IF P1 dB (dBm) GC 20 ICC (mA) 10 GC (dB) 0 GC –5 10 GC (dB) 0 ICC –5 P1 dB 15 ICC (mA) 5 10 5 10 P1 dB 0 –10 0 2 4 6 8 VCC (V) 0 10 0 –10 –55 –25 +25 +85 5 +125 TEMPERATURE (°C) Figure 1. Conversion Gain, IF P1 dB and ICC Current vs. VCC Bias Voltage. 10 4:1 RF LO IF 3:1 Figure 2. Conversion Gain, IF P1 dB and ICC Current vs. Case Temperature. 10 IF = 70 MHz 5 GC (dB) VSWR 8 GC (dB) 6 4 0 IF = 1 GHz 2:1 2 –5 0.1 0.2 0.5 1.0 2.0 5.0 10 RF FREQUENCY (GHz) 1:1 0.1 1.0 FREQUENCY (GHz) 10 0 –15 –10 –5 0 5 LO POWER (dBm) Figure 3. Typical RF to IF Conversion Gain vs. RF Frequency, TA = 25°C (Low Side LO). 10 LO = 2 GHz RF to IF (dBc) LO to RF and IF (dBm) Figure 4. RF, LO and IF Port VSWR vs. Frequency. Figure 5. RF to IF Conversion Gain vs. LO Power. 0 RF to IF LO to IF LO to RF 0 HARMONIC LO ORDER — 18 16 42 29 45 0 21 0 35 20 44 36 1 35 45 42 44 52 57 2 74 48 72 59 64 64 3 >75 >75 >75 >75 >75 >75 4 >75 >75 >75 >75 >75 >75 5 8 6 GC (dB) –10 1 2 3 4 5 4 2 0 –2 0.01 High Side LO Low Side LO 0.1 FREQUENCY, RF–LO (GHz) 1.0 2.0 –20 –30 –40 0.1 1.0 FREQUENCY (GHz) 10 Figure 6. RF to IF Conversion Gain vs. IF Frequency. Figure 7. RF Feedthrough Relative to IF Carrier, dBm LO to RF and IF Leakage vs. Frequency. HARMONIC RF ORDER Xmn = Pif – P(m*rf – n*lo) Figure 8. Harmonic Intermodulation Suppression (dB Below Desired Output) RF at 1 GHz, LO at 0.752 GHz, IF at 0.248 GHz. 7-121 Package Dimensions SO-8 Plastic Package 1.27 (.050) 6x 3.80/4.00 (.1497/.1574) M810 5.84/6.20 (.230/.244) Pin 1 1.35/1.75 (.0532/.0688) 4.72/5.00 (.186/.197) 0.38 ± 0.10 (.015 ± .004) x 45° 0°/8° 0.10 (.004) 0.33/0.51 (.013/.020) 8X 0.10/0.25 (.004/.0098) 0.41/1.27 (.016/.050) 0.19/0.25 (.0075/.0098) Note: 1. Dimensions are shown in millimeters (inches). 7-122