MSA-0185

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable (k>1) • Low Cost Plastic Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package Description The MSA-0185 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9693E 6-258 MSA-0185 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 105°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 9.5 mW/°C for TC > 129°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. MSA-0185 Electrical Specifications[1], TA = 25°C Symbol GP ∆ GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.5 GHz f = 0.1 to 0.6 GHz Units dB Min. 16.0 Typ. 18.5 17.5 ± 0.6 1.0 1.3:1 1.3:1 Max. dB GHz dB dBm dBm psec V mV/ °C 4.0 5.5 1.5 14.0 150 5.0 –9.0 6.0 Note: 1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current is on the following page. 6-259 MSA-0185 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 17 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .06 .06 .06 .06 .06 .06 .07 .07 .07 .04 .03 .07 .12 .16 .21 .25 166 149 133 120 105 94 72 49 12 –13 –84 –159 –174 170 150 126 18.4 18.3 18.1 17.8 17.5 17.2 16.5 15.7 13.8 12.0 10.6 9.2 8.0 6.8 5.7 4.7 8.36 8.20 8.01 7.78 7.53 7.23 6.66 6.09 4.89 3.98 3.38 2.88 2.50 2.19 1.93 1.72 172 165 158 151 144 138 127 116 94 76 65 52 38 26 14 3 –22.6 –22.0 –22.2 –21.9 –21.4 –21.4 –20.7 –19.7 –18.0 –16.2 –15.1 –14.2 –13.3 –12.8 –12.3 –12.2 .074 .079 .078 .080 .085 .085 .092 .104 .126 .154 .175 .194 .216 .229 .242 .245 3 8 11 14 18 19 24 27 32 31 33 29 24 19 13 –6 .07 .07 .08 .09 .09 .09 .10 .10 .11 .11 .11 .09 .08 .08 .08 .07 –17 –28 –43 –56 –68 –75 –89 –100 –120 –134 –138 –146 –135 –120 –107 –110 A model for this device is available in the DEVICE MODELS section. MSA-0185 Typical Performance, TA = 25°C (unless otherwise noted) 21 18 Gain Flat to DC 15 G p (dB) 12 9 6 5 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 1 2 3 Vd (V) 4 5 6 0 10 15 20 I d (mA) 25 30 5 I d (mA) 15 20 25 TC = +85°C TC = +25°C TC = –25°C G p (dB) 25 0.1 GHz 0.5 GHz 1.0 GHz 15 2.0 GHz 10 20 10 Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 17 mA. G p (dB) 18 17 16 7 6 5 4 P1 dB (dBm) 3 2 1 0 –25 0 +25 +55 +85 P1 dB NF 7 GP Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 6 I d = 20 mA 4 7.0 6.5 P1 dB (dBm) I d = 17 mA NF (dB) 2 6 5 4 NF (dB) I d = 13 mA I d = 17 mA I d = 20 mA 6.0 0 I d = 13 mA 5.5 –2 –4 0.1 5.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) TEMPERATURE (°C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.5 GHz, Id = 17 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-260 85 Plastic Package Dimensions .020 .51 GROUND 4 0.143 ± 0.015 3.63 ± 0.38 1 RF INPUT A01 45° 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .006 ± .002 .15 ± .05 GROUND .085 2.15 2 .060 ± .010 1.52 ± .25 5° TYP. .07 0.43 .286 ± .030 7.36 ± .76 6-261