MSA-0186-TR1

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Description The MSA-0186 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. 86 Plastic Package The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, Note: silicon bipolar MMIC process 1. Refer to PACKAGING section “Tapewhich uses nitride self-alignment, and-Reel Packaging for Semiconductor Devices”. ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9694E 6-262 MSA-0186 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.7 mW/°C for TC > 127°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.5 GHz f = 0.1 to 0.6 GHz Units dB Min. 15.5 Typ. 18.5 17.5 ± 0.7 0.9 1.3:1 1.2:1 Max. dB GHz dB dBm dBm psec V mV/ °C 4.0 5.5 1.5 14.0 200 5.0 –9.0 6.0 Note: 1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0186-BLK MSA-0186-TR1 No. of Devices 100 1000 Container Antistatic Bag 7" Reel For more information refer to PACKAGING section, “Tape and Reel Packaging for Semiconductor Devices.” 6-263 MSA-0186 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 17 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 .05 .06 .07 .08 .08 .09 .10 .10 .07 .02 .06 .14 .23 .31 .45 148 124 103 89 76 66 50 35 12 –12 165 150 137 125 105 18.5 18.3 18.1 17.7 17.4 17.0 16.2 15.3 13.2 11.3 9.8 8.3 7.0 5.7 3.3 8.39 8.22 8.03 7.67 7.42 7.06 6.47 5.83 4.57 3.67 3.09 2.60 2.24 1.93 1.46 171 162 154 146 139 131 119 107 83 64 50 34 20 6 –17 –23.0 –22.8 –22.6 –22.2 –21.9 –21.4 –20.5 –19.6 –17.7 –16.1 –14.8 –13.9 –13.4 –13.0 –12.7 .071 .073 .074 .078 .081 .085 .094 .105 .131 .157 .182 .202 .213 .223 .231 4 9 13 14 17 21 25 29 30 27 24 19 12 5 –5 .08 .08 .07 .07 .06 .06 .07 .07 .08 .08 .08 .09 .09 .09 .09 –7 –14 –24 –31 –39 –47 –67 –89 –165 156 134 124 117 114 132 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 24 Gain Flat to DC 21 20 18 25 G p (dB) 18 17 16 7 6 5 NF 7 6 5 4 P1 dB GP TC = +85°C TC = +25°C TC = –25°C G p (dB) 12 9 6 3 0 I d = 13 mA I d = 17 mA I d = 25 mA 0.1 0.3 0.5 1.0 3.0 6.0 I d (mA) 15 10 4 P1 dB (dBm) 3 2 1 0 –25 0 +25 +55 +85 5 0 0 1 2 3 Vd (V) 4 5 6 FREQUENCY (GHz) TEMPERATURE (°C) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 17 mA. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.5 GHz, Id=17 mA. 6 I d = 20 mA 4 7.0 I d = 13 mA I d = 17 mA I d = 20 mA 6.5 P1 dB (dBm) I d = 17 mA NF (dB) 2 6.0 0 I d = 13 mA 5.5 –2 –4 0.1 5.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-264 NF (dB) 15 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) GROUND 45° 4 RF INPUT 1 A01 RF OUTPUT AND DC BIAS C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 GROUND 2.67 ± 0.38 (0.105 ± 0.15) 1.52 ± 0.25 (0.060 ± 0.010) 5° TYP. 0.203 ± 0.051 (0.006 ± 0.002) 0.66 ± 0.013 (0.026 ± 0.005) 0.30 MIN (0.012 MIN) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-265