MSA-0235

Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0235, -0236 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0236. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0235 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9697E 6-274 MSA-0235, -0236 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 60 mA 325 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 145°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.9 mW/°C for TC > 153°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 1.6 GHz Units dB dB GHz Min. 11.5 Typ. 12.5 ± 0.6 2.7 1.2:1 1.4:1 Max. 13.5 ± 1.0 dB dBm dBm psec V mV/ °C 4.5 6.5 4.5 17.0 125 5.0 –8.0 5.5 Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0235 MSA-0236-BLK MSA-0236-TR1 No. of Devices 10 100 1000 Container Strip Antistatic Bag 7" Reel For more information refer to PACKAGING section, “Tape and Reel Packaging for Semiconductor Devices.” 6-275 MSA-0235, -0236 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 25 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .08 .08 .08 .08 .07 .07 .06 .03 .03 .09 .16 .20 .27 .41 170 163 147 130 112 91 47 –1 –115 –157 –175 173 136 94 12.6 12.5 12.5 12.4 12.2 12.1 11.6 11.0 10.2 9.3 8.3 7.2 5.2 3.2 4.25 4.23 4.19 4.14 4.09 4.02 3.80 3.53 3.24 2.92 2.60 2.29 1.81 1.44 176 171 161 152 143 134 112 91 75 57 39 23 –6 –33 –18.6 –18.5 –18.4 –18.3 –18.1 –18.0 –17.3 –16.3 –15.4 –15.1 –14.4 –14.1 –13.5 –13.5 .118 .119 .120 .121 .125 .126 .137 .153 .169 .176 .190 .198 .211 .212 2 2 4 4 7 10 11 10 12 8 3 –2 –11 –24 .16 .15 .15 .15 .15 .15 .13 .11 .09 .08 .09 .11 .15 .11 –6 –10 –21 –30 –39 –46 –66 –89 –111 –127 –129 –118 –117 –148 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 14 12 Gain Flat to DC 10 G p (dB) 8 6 4 10 2 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 1 2 3 Vd (V) 4 5 6 4 15 20 25 30 I d (mA) 35 40 6 I d (mA) 40 TC = +125°C TC = +25°C 30 T = –55°C C G p (dB) 14 12 10 20 8 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 25 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. G p (dB) 13 12 12 10 I d = 40 mA 7.5 11 8 7 6 GP P1 dB (dBm) 8 NF 7 NF (dB) 6 P1 dB 5 4 2 3 –25 +25 +85 2 +125 I d = 18 mA 0 0.1 0.2 0.3 8 NF (dB) I d = 25 mA 6 4 7.0 6.5 P1 dB (dBm) 5 4 3 2 –55 6.0 5.5 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 I d = 18 mA I d = 25 mA I d = 40 mA 1.0 2.0 4.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f=1.0 GHz, Id = 25 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-276 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS 3 .020 .508 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 1 .057 ± .010 1.45 ± .25 .100 2.54 .022 .56 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 A02 RF INPUT 6-277