MSA-0436

Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0435, -0436 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 3.8 GHz • 12.5 dBm Typical P1 dB at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0436. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0435 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 5965-9575E 6-330 MSA-0435, -0436 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.1 mW/°C for TC > 109°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.5 GHz f = 0.1 to 2.5 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 2.5 GHz Units dB dB GHz Min. 7.5 Typ. 8.5 ± 0.6 3.8 1.4:1 1.9:1 Max. 9.5 ± 1.0 dB dBm dBm psec V mV/ °C 4.75 6.5 12.5 25.5 125 5.25 –8.0 5.75 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0435 MSA-0436-BLK MSA-0436-TR1 No. of Devices 10 100 1000 Container Strip Antistatic Bag 7" Reel For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-331 MSA-0435, -0436 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .08 .08 .07 .07 .05 .05 .04 .09 .14 .22 .28 .34 .37 .42 175 172 171 166 169 175 –142 –145 –154 –175 170 156 140 120 8.5 8.5 8.5 8.5 8.4 8.3 8.1 7.8 7.3 6.6 5.8 4.8 3.9 3.0 2.67 2.68 2.67 2.66 2.64 2.61 2.55 2.46 2.33 2.14 1.94 1.74 1.57 1.41 175 170 161 151 142 136 109 87 71 50 32 15 –1 –16 –16.4 –16.3 –16.4 –16.2 –16.1 –16.0 –15.0 –14.2 –13.1 –12.5 –11.7 –11.3 –10.7 –10.4 .151 .153 .151 .155 .156 .159 .178 .196 .221 .238 .260 .271 .291 .302 1 2 3 6 8 10 13 15 18 14 9 4 –2 –8 .20 .20 .20 .21 .22 .24 .26 .28 .31 .33 .35 .34 .33 .32 –10 –16 –33 –45 –57 –68 –96 –123 –140 –160 –173 –179 –171 –160 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 12 10 60 8 6 4 20 2 0 0 1 2 3 4 Vd (V) 5 6 7 5 0.1 GHz 1.0 GHz 2.0 GHz 20 30 40 50 I d (mA) 60 70 G p (dB) I d = 70 mA P1 dB (dBm) 15 12 9 NF (dB) 6 3 0.1 I d = 30 mA 6.0 I d = 30 mA I d = 50 mA I d = 70 mA 0.1 0.2 0.3 0.5 1.0 2.0 4.0 NF (dB) 0.5 1.0 2.0 4.0 I d = 50 mA 6.5 0.2 0.3 FREQUENCY (GHz) G p (dB) I d (mA) Gain Flat to DC 7 80 TC = +125°C TC = +25°C TC = –55°C 9 8 40 6 0.1 0.3 0.5 1.0 3.0 6.0 4 FREQUENCY (GHz) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 13 P1 dB (dBm) 12 11 10 9 G p (dB) 8 7 6 5 –55 –25 +25 NF GP 8 7 6 +85 5 +125 P1 dB 21 18 7.5 7.0 5.5 TEMPERATURE, (°C) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=50mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-332 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS 3 .020 .508 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 1 .057 ± .010 1.45 ± .25 .100 2.54 .022 .56 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 A04 RF INPUT 6-333