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MSA-0485

MSA-0485

  • 厂商:

    HP

  • 封装:

  • 描述:

    MSA-0485 - Cascadable Silicon Bipolar MMIC Amplifier - Agilent(Hewlett-Packard)

  • 数据手册
  • 价格&库存
MSA-0485 数据手册
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0485 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 3.6 GHz • 8.0 dB Typical Gain at 1.0 GHz • 12.5 dBm Typical P1 dB at 1.0 GHz • Unconditionally Stable (k>1) • Low Cost Plastic Package plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package Description The MSA-0485 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 5965-9577E 6-338 MSA-0485 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 85 mA 500 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 90°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 11.1 mW/°C for TC > 105°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆ GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.5 GHz f = 0.1 to 2.5 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 1.0 GHz f = 0.1 to 2.5 GHz Units dB Min. 7.0 Typ. 8.3 8.0 ± 0.7 3.6 1.6:1 2.0:1 Max. dB GHz dB dBm dBm psec V mV/ °C 4.2 7.0 12.5 25.5 125 5.25 –8.0 6.3 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. 6-339 MSA-0485 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .21 .20 .20 .19 .19 .18 .16 .18 .21 .27 .33 .38 .42 .44 177 176 172 171 168 166 167 168 173 169 161 154 145 131 8.4 8.3 8.2 8.1 8.1 8.0 7.8 7.4 6.9 6.3 5.7 4.8 4.1 3.3 2.63 2.60 2.57 2.55 2.54 2.52 2.46 2.34 2.21 2.07 1.92 1.74 1.59 1.46 175 171 163 155 146 138 117 97 83 65 48 33 18 4 –16.1 –16.2 –16.1 –16.2 –16.0 –15.7 –15.3 –14.6 –13.8 –13.4 –12.6 –12.3 –12.1 –11.7 .156 .155 .156 .155 .158 .164 .171 .187 .204 .213 .234 .242 .249 .259 2 2 3 5 6 9 11 12 16 13 9 6 3 –3 .08 .08 .10 .13 .16 .18 .25 .29 .34 .38 .39 .37 .36 .34 –16 –30 –54 –71 –83 –93 –116 –136 –150 –161 –172 –179 –174 –165 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 12 10 60 G p (dB) 8 6 4 20 2 0 0 1 2 3 4 Vd (V) 5 6 7 5 0.1 GHz 1.0 GHz 2.0 GHz 20 30 40 50 I d (mA) 60 70 G p (dB) I d = 70 mA P1 dB (dBm) G p (dB) 9 8 GP 7 NF (dB) 8 NF 7 6 –25 0 +25 +55 +85 TEMPERATURE (°C) 3 0.1 5.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 FREQUENCY (GHz) 6 15 NF (dB) 12 9 I d = 30 mA 6.0 I d = 30 mA I d = 50 mA I d = 70 mA 1.0 2.0 I d = 50 mA 6.5 I d (mA) Gain Flat to DC 7 80 TC = +85°C TC = +25°C TC = –25°C 9 8 40 6 0.1 0.3 0.5 1.0 3.0 6.0 4 FREQUENCY (GHz) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. P1 dB (dBm) 13 12 11 P1 dB 21 18 7.5 7.0 FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=50mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-340 85 Plastic Package Dimensions .020 .51 GROUND 4 0.143 ± 0.015 3.63 ± 0.38 1 RF INPUT A04 45° 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .006 ± .002 .15 ± .05 GROUND .085 2.15 2 .060 ± .010 1.52 ± .25 5° TYP. .07 0.43 .286 ± .030 7.36 ± .76 6-341
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