MSA-0486-TR1

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 3.2 GHz • 8 dB Typical Gain at 1.0 GHz • 12.5 dBm Typical P1 dB at 1.0 GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface Mount Semiconductors”. Description The MSA-0486 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 86 Plastic Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 5965-9578E 6-342 MSA-0486 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 85 mA 500 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 100°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 10 mW/°C for TC > 100°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 1.0 GHz f = 0.1 to 2.0 GHz Units dB Min. 7.0 Typ. 8.3 8.0 ± 0.6 3.2 1.5:1 1.9:1 Max. dB GHz dB dBm dBm psec V mV/ °C 4.2 7.0 12.5 25.5 140 5.25 –8.0 6.3 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0486-TR1 MSA-0486-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-343 MSA-0486 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 .14 .14 .14 .13 .13 .13 .15 .21 .29 .37 .44 .50 .61 178 175 171 168 166 165 168 168 165 153 142 130 109 8.4 8.3 8.2 8.1 8.0 7.9 7.7 7.3 6.8 5.9 4.8 3.6 1.3 2.62 2.61 2.57 2.54 2.52 2.48 2.42 2.32 2.18 1.97 1.74 1.52 1.16 175 170 161 151 141 131 108 84 65 43 24 7 –21 –16.2 –16.3 –16.3 –16.0 –15.9 –15.7 –14.8 –14.0 –13.1 –12.7 –12.5 –12.5 –12.7 .154 .153 .154 .158 .161 .165 .182 .199 .222 .231 .238 .238 .231 1 2 3 4 5 6 8 7 4 –1 –5 –10 –17 .16 .16 .17 .18 .20 .21 .27 .32 .38 .40 .41 .41 .43 –10 –20 –39 –57 –74 –88 –121 –149 –168 173 157 145 132 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) TC = +85°C TC = +25°C 60 T = –25°C C I d (mA) P1 dB (dBm) 10 80 13 12 11 G p (dB) 9 40 8 GP 7 NF (dB) 20 8 NF 7 6 1 2 3 4 Vd (V) 5 6 7 –25 0 +25 +55 +85 TEMPERATURE (°C) P1 dB 8 G p (dB) 6 4 2 Id = 30 mA Id = 50 mA Id = 70 mA Gain Flat to DC 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 Figure 1. Typical Power Gain vs. Frequency, TA = 25°C. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=50mA. 21 18 8.0 7.5 P1 dB (dBm) 15 12 9 6.5 6 3 0.1 I d = 30 mA 6.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 FREQUENCY (GHz) I d = 30 mA I d = 50 mA I d = 70 mA 1.0 2.0 I d = 70 mA NF (dB) I d = 50 mA 7.0 FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-344 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) GROUND 45° 4 RF INPUT 1 A04 RF OUTPUT AND DC BIAS C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 GROUND 2.67 ± 0.38 (0.105 ± 0.15) 1.52 ± 0.25 (0.060 ± 0.010) 5° TYP. 0.203 ± 0.051 (0.006 ± 0.002) 0.66 ± 0.013 (0.026 ± 0.005) 0.30 MIN (0.012 MIN) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-345