MSA-0505-TR1

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features • Cascadable 50 Ω Gain Block • High Output Power: 18.0 dBm Typical P1 dB at 1.0 GHz • Low Distortion: 29.0 dBm Typical IP3 at 1.0 GHz • 7.0 dB Typical Gain at 1.0 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Semiconductor Devices.” Description The MSA-0505 is a high performance medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 05 Plastic Package Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 8.4 V 2 5965-9581E 6-354 MSA-0505 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 135 mA 1.5 W +25 dBm 200°C –65 to 150°C Thermal Resistance[2,4]: θjc = 85°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 11.8 mW/°C for TC > 73°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol P1 dB GP ∆G P f3 dB VSWR IP3 NF tD Vd dV/dT Parameters and Test Conditions: Id = 80 mA, ZO = 50 Ω Output Power at 1 dB Gain Compression Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR Third Order Intercept Point 50 Ω Noise Figure Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.5 GHz f = 1.0 GHz f = 0.5 GHz f = 1.0 GHz f = 0.1 to 1.5 GHz Units dBm dBm dB Min. 16.0 6.0 Typ. 19.0 18.0 7.5 7.0 ± 0.75 2.3 1.6:1 2.0:1 Max. dB GHz dBm dB psec V mV/ °C 6.7 29.0 6.5 190 8.4 –16.0 10.1 Notes: 1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). Part Number Ordering Information Part Number MSA-0505-TR1 MSA-0505-STR No. of Devices 500 10 Container 7" Reel Strip For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-355 MSA-0505 Typical Scattering Parameters (TA = 25°C, Id = 80 mA) Freq. MHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 5 25 50 100 200 400 600 800 1000 1500 2000 2500 3000 .56 .24 .15 .13 .12 .12 .13 .13 .14 .21 .30 .40 .52 –39 –103 –130 –155 –170 178 172 168 166 159 148 136 121 14.9 9.7 8.2 7.8 7.7 7.5 7.4 7.2 7.0 6.4 5.2 4.1 2.7 5.56 3.05 2.57 2.45 3.43 2.37 2.34 2.29 2.24 2.09 1.82 1.60 1.36 161 156 163 165 161 148 134 119 105 72 42 17 –7 –18.5 –13.9 –13.7 –13.7 –13.5 –13.6 –13.6 –13.6 –13.4 –13.3 –13.1 –12.9 –12.6 .120 .202 .207 .207 .211 .209 .209 .209 .213 .217 .222 .227 .234 39 12 7 3 1 –1 –2 –3 –4 –6 –9 –11 –16 .65 .25 .15 .11 .11 .14 .17 .21 .25 .34 .42 .48 .55 –36 –90 –116 –132 –145 –146 –151 –157 –164 176 159 146 133 0.60 0.97 1.15 1.21 1.21 1.23 1.23 1.23 1.21 1.16 1.12 1.05 0.92 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 10 120 TC = +85°C TC = +25°C TC = –25°C P1 dB (dBm) 22 8 90 GAIN (dB) 0.1 GHz 20 0.5 GHz Id (mA) 6 0.5 GHz 18 60 4 1.5 GHz 2.0 GHz 1.0 GHz 16 1.0 GHz 30 14 2.0 GHz 2 0 8 10 12 14 16 18 20 22 24 POWER OUT (dBm) 0 0 3 6 Vd (V) 9 12 12 –25 0 +25 +85 TEMPERATURE (°C) Figure 1. Typical Gain vs. Power Out, TA = 25°C, Id = 80 mA. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, vs. Case Temperature, Id = 80 mA. 14 IP3 (dBm) 12 10 Gp (dB) 8 6 4 2 0 .01 .05 0.1 0.5 1.0 5.0 FREQUENCY (GHz) 34 30 IP3 26 22 P1 dB (dBm) 18 P1 dB 14 60 70 80 Id (mA) 90 100 Figure 4. Gain vs. Frequency, Id = 80 to 100 mA. Figure 5. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Case Temperature, f = 1.0 GHz. 6-356 05 Plastic Package Dimensions GROUND 4 0.030 0.89 RF INPUT 0.030 DIA 0.76 RF OUTPUT AND DC BIAS 5 1 3 0.030 ± 0.010 0.76 ± 0.25 (4 PLCS) GROUND 2 0.135 ± 0.015 3.42 ± 0.25 (4 PLCS) 0.030 0.76 0.050 1.27 0.020 0.51 0.008 ± 0.002 0.20 ± 0.05 0.145 3.68 0.100 ± 0.010 2.54 ± 0.25 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 0.0005 ± 0.010 (0.013 ± 0.25) 6-357