MSA-0600

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0600 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage (3.5 V typical V d) • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB Typical at 0.5 GHz • Low Noise Figure: 2.8 dB Typical at 0.5 GHz broad band IF and RF amplifiers in commercial, industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, “Chip Use”. Chip Outline[1] Description The MSA-0600 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and Note: 1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.5 V 2 5965-9583E 6-362 MSA-0600 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 50°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25°C. 3. Derate at 20 mW/°C for TMounting Surface > 190°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions[2]: Id = 16 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 0.6 GHz Units dB dB GHz Min. Typ. 20.5 ± 0.7 1.0 1.9:1 1.8:1 Max. dB dBm dBm psec V mV/ °C 3.1 2.8 2.0 14.5 200 3.5 –8.0 3.9 Notes: 1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. Part Number Ordering Information Part Number MSA-0600-GP4 Devices Per Tray 100 6-363 MSA-0600 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 16 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .05 .07 .09 .11 .13 .15 .19 .25 .32 .40 .45 .49 .51 .51 .51 .51 –148 –134 –125 –121 –120 –119 –121 –123 –134 –149 –157 –171 –174 179 170 162 20.6 20.4 20.2 20.0 19.7 19.4 18.7 17.9 15.7 13.5 11.6 9.9 8.3 6.9 5.7 4.7 10.66 10.48 10.28 10.01 9.71 9.34 8.60 7.82 6.10 4.73 3.79 3.12 2.60 2.21 1.93 1.71 173 166 159 151 145 140 123 117 96 79 70 61 51 43 37 29 –23.3 –23.1 –22.6 –22.4 –22.1 –21.8 –20.7 –19.8 –18.3 –17.4 –16.9 –16.6 –16.4 –16.3 –16.0 –15.9 .068 .070 .074 .076 .078 .081 .092 .102 .122 .136 .142 .148 .152 .153 .159 .161 4 8 13 15 17 20 25 26 29 27 30 28 25 26 24 24 .05 .09 .13 .16 .20 .22 .25 .28 .29 .26 .23 .19 .16 .12 .10 .11 –67 –91 –102 –110 –117 –124 –136 –148 –168 175 169 168 173 –170 –149 –126 1.05 1.04 1.01 1.00 0.98 0.97 0.93 0.90 0.89 0.91 0.97 1.03 1.10 1.22 1.31 1.41 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 21 18 Gain Flat to DC 15 G p (dB) 25 Gp (dB) 21 0.1 GHz 0.5 GHz 20 19 18 17 2.0 GHz P1 dB (dBm) 20 1.0 GHz G p (dB) GP 12 9 6 15 5 4 3 2 1 0 –55 –25 +25 +85 +125 NF P1 dB 5 4 3 2 1 0 TEMPERATURE (°C) NF (dB) 10 5 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 10 15 20 25 30 I d (mA) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 16 mA. Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 0.5 GHz, Id = 16 mA. 12 I d = 30 mA 8 P1 dB (dBm) NF (dB) 4.0 3.5 4 I d = 20 mA 3.0 I d = 16 mA 0 I d = 12 mA -4 0.1 2.5 I d = 12 mA I d = 16 mA, 30 mA I d = 20 mA 0.1 0.2 0.3 0.5 1.0 2.0 4.0 2.0 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-364 MSA-0600 Chip Dimensions INPUT 300 µm 12.8 mil 300 µm 12.8 mil GROUND 6-365