MSA-0686

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0686 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Low Noise Figure: 3.0 dB Typical at 0.5 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface Mount Semiconductors”. Description The MSA-0686 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 86 Plastic Package Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.5 V 2 5965-9588E 6-382 MSA-0686 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 120°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.3 mW/°C for TC > 126°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.5 GHz f = 0.1 to 0.5 GHz Units dB Min. 16.5 Typ. 20.0 18.5 ± 0.7 0.8 1.7:1 1.7:1 Max. dB GHz dB dBm dBm psec V mV/ °C 2.8 3.0 2.0 14.5 225 3.5 –8.0 4.2 Notes: 1. The recommended operating current range for this device is 12 to 20 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0686-TR1 MSA-0686-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-383 MSA-0686 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 Note: .06 .06 .07 .08 .08 .09 .12 .15 .25 .34 .43 .49 .56 .61 .70 –175 –169 –164 –158 –154 –152 –152 –154 –171 171 155 140 128 118 99 20.1 19.8 19.4 19.1 18.7 18.0 17.2 16.3 14.0 11.9 9.8 8.0 6.4 5.0 2.4 10.08 9.77 9.35 8.98 8.58 7.94 7.25 6.51 5.01 3.94 3.09 2.51 2.09 1.78 1.32 170 161 152 144 135 128 114 102 76 56 42 28 15 3 –18 –23.3 –23.2 –22.5 –22.2 –21.6 –21.1 –20.3 –19.5 –17.6 –16.1 –15.9 –15.3 –15.1 –14.9 –14.7 .069 .069 .075 .078 .083 .088 .097 .106 .133 .157 .161 .171 .175 .180 .185 4 8 13 16 18 21 25 25 22 19 16 11 6 3 –2 .04 .07 .10 .13 .15 .18 .21 .24 .27 .27 .27 .26 .25 .24 .24 –84 –103 –113 –123 –131 –140 –155 –168 165 147 134 124 118 115 118 1.05 1.05 1.03 1.02 1.01 1.01 1.00 0.99 0.99 1.01 1.06 1.10 1.13 1.15 1.16 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 24 21 18 G p (dB) 25 Gp (dB) TC = +85°C TC = +25°C 20 TC = –25°C 20 19 18 17 GP 15 12 9 6 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) I d = 12 mA I d = 16 mA I d = 25 mA Gain Flat to DC 5 0 0 1 2 3 Vd (V) 4 5 Id (mA) 15 5 P1 dB (dBm) 5 NF P1 dB 4 3 2 1 0 –25 0 +25 +55 +85 TEMPERATURE (°C) NF (dB) 10 4 3 2 1 0 Figure 1. Typical Power Gain vs. Frequency, TA = 25°C. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=16mA. 12 I d = 30 mA 8 P1 dB (dBm) 4.0 3.5 I d = 20 mA NF (dB) 4 I d = 16 mA 3.0 0 I d = 12 mA –4 0.1 2.5 I d = 12 mA I d = 16 mA, 30 mA I d = 20 mA 0.1 0.2 0.3 0.5 1.0 2.0 4.0 2.0 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-384 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) GROUND 45° 4 RF OUTPUT AND DC BIAS A06 1 C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 RF INPUT GROUND 2.67 ± 0.38 (0.105 ± 0.15) 1.52 ± 0.25 (0.060 ± 0.010) 5° TYP. 0.203 ± 0.051 (0.006 ± 0.002) 0.66 ± 0.013 (0.026 ± 0.005) 0.30 MIN (0.012 MIN) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-385