MSA-0986-TR1

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 Features • Broadband, Minimum Ripple Cascadable 50 Ω Gain Block • 7.2 ± 0.5 dB Typical Gain Flatness from 0.1 to 3.0 GHz • 3 dB Bandwidth: 0.1 to 5.5 GHz • 10.5 dBm Typical P1 dB at 2.0 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.” Description The MSA-0986 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for very wide bandwidth industrial and commercial applications that require flat gain and low VSWR. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 86 Plastic Package Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9552E 6-438 MSA-0986 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65 to +150°C Thermal Resistance[2,4]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.1 mW/°C for TC > 80°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 1.0 to 3.0 GHz f = 1.0 to 3.0 GHz f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 0.1 to 3.0 GHz Units dB dB GHz Min. 6.0 Typ. 7.2 ± 0.5 5.5 1.6:1 1.8:1 Max. dB dBm dBm psec V mV/ °C 6.2 6.2 10.5 23.0 95 7.8 –16.0 9.4 Notes: 1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz gain (G P). Part Number Ordering Information Part Number MSA-0986-TR1 MSA-0986-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-439 MSA-0986 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.02 0.05 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .36 .24 .22 .21 .21 .22 .22 .23 .24 .25 .26 .26 .26 .28 .31 .37 .44 .51 –105 –145 –164 –179 165 155 145 136 118 106 100 94 95 96 100 101 97 94 11.4 8.5 7.7 7.5 7.4 7.4 7.3 7.3 7.2 7.2 7.2 7.1 7.0 6.7 6.5 6.0 5.4 4.6 3.72 2.65 2.43 2.37 2.34 2.33 2.33 2.32 2.30 2.28 2.29 2.26 2.23 2.17 2.10 2.00 1.86 1.69 145 156 166 167 162 156 149 142 125 109 94 77 60 43 26 9 –7 –22 –14.1 –13.7 –13.5 –13.5 –13.4 –13.5 –13.4 –13.4 –13.3 –13.0 –13.0 –13.0 –12.8 –13.1 –13.6 –14.2 –14.9 –15.8 .198 .205 .211 .212 .214 .212 .213 .214 .217 .224 .224 .224 .229 .221 .210 .196 .181 .162 18 5 4 1 –1 –2 –2 –4 –6 –10 –12 –15 –21 –25 –31 –35 –38 –37 .38 .25 .22 .22 .22 .22 .23 .24 .26 .28 .33 .34 .36 .35 .32 .26 .19 .14 –102 –143 –158 –172 179 175 171 167 157 148 139 128 116 104 94 86 88 107 0.73 1.08 1.17 1.20 1.20 1.21 1.21 1.20 1.19 1.16 1.15 1.15 1.14 1.18 1.23 1.30 1.38 1.47 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 12 10 8 G p (dB) 30 Id (mA) 6 4 NF (dB) 2 0 .05 10 0 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 Vd (V) 8 10 FREQUENCY (GHz) GP 20 7 6 5 4 –25 0 +25 +55 +85 NF 50 TC = +85°C TC = +25°C 40 T = –25°C C P1 dB (dBm) 12 11 10 P1 dB Gp (dB) 8 7 6 I d = 25 mA I d = 35-45 mA TEMPERATURE (°C) Figure 1. Typical Power Gain vs. Frequency. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 2.0 GHz, Id = 35 mA. 15 7.0 13 P1 dB (dBm) I d = 45 mA 6.5 NF (dB) 11 I d = 35 mA 9 6.0 I d = 45 mA I d = 35 mA I d = 25 mA 5.5 7 I d = 25 mA 5 0.1 5.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-440 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) GROUND 45° 4 RF OUTPUT AND DC BIAS A09 1 C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 RF INPUT GROUND 2.67 ± 0.38 (0.105 ± 0.15) 1.52 ± 0.25 (0.060 ± 0.010) 5° TYP. 0.203 ± 0.051 (0.006 ± 0.002) 0.66 ± 0.013 (0.026 ± 0.005) 0.30 MIN (0.012 MIN) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-441