MSA-1104

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1104 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth: 50 MHz to 1.3 GHz • 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.6 dB Typical Noise Figure at 0.5 GHz • Low Cost Plastic Package plastic package. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 04A Plastic Package Description The MSA-1104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.5 V 2 2 MSA-1104 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 550 mW +1 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.7 mW/°C for TC > 87°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Power Gain (|S21 | 2) f = 0.05 GHz f = 0.5 GHz f = 1.0 GHz f = 0.1 to 1.0 GHz f = 0.1 to 1.0 GHz f = 0.1 to 1.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz Units dB dB dB dB GHz Min. 10.0 Typ. 12.7 12.0 10.5 ± 1.0 1.3 1.5:1 1.7:1 Max. ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient dB dBm dBm psec V mV/°C 4.4 3.6 17.5 30 200 5.5 –8.0 6.6 Notes: 1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P). 3 MSA-1104 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k .0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000 .76 .20 .05 .04 .04 .04 .06 .07 .09 .11 .13 .15 .16 .18 .28 .37 .45 .52 –22 –79 –78 –75 –81 –93 –105 –115 –124 –132 –140 –147 –154 –161 171 149 133 118 19.3 13.7 12.8 12.7 12.6 12.6 12.4 12.3 12.1 11.8 11.6 11.3 11.0 10.7 9.1 7.6 6.1 4.6 9.19 4.83 4.35 4.31 4.29 4.24 4.18 4.11 4.01 3.91 3.80 3.68 3.56 3.43 2.85 2.39 2.02 1.69 167 164 174 174 171 164 156 148 141 134 126 120 113 106 77 52 33 14 –24.4 –16.5 –16.2 –16.4 –16.4 –16.3 –16.2 –16.0 –15.8 –15.6 –15.4 –15.2 –14.9 –14.7 –13.5 –13.0 –12.7 –12.6 .060 .149 .154 .151 .152 .153 .155 .158 .162 .166 .170 .174 .180 .184 .211 .224 .231 .234 54 12 2 2 2 3 4 5 6 7 7 7 7 6 2 –5 –10 –16 .77 .21 .06 .05 .05 .07 .10 .12 .15 .17 .19 .22 .24 .26 .35 .43 .47 .50 –22 –83 –101 –136 –137 –135 –136 –139 –144 –150 –156 –161 –168 –173 163 140 125 112 0.48 0.96 1.07 1.09 1.09 1.09 1.08 1.07 1.06 1.06 1.05 1.04 1.03 1.03 0.99 0.99 1.02 1.05 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C, ZO = 50 Ω (unless otherwise noted) 16 14 12 ZO = 50 Ω 100 TC = +85°C TC = +25°C 80 T = –25°C C 60 14 0.1 GHz 0.5 GHz 1.0 GHz, 1.0 GHz 12 G p (dB) 10 8 6 4 40 Gp (dB) Id (mA) ZO = 75 Ω 10 8 2.0 GHz 20 2 0 .02 0 .05 0.1 0.5 1.0 2.0 3.0 0 2 4 Vd (V) 6 8 FREQUENCY (GHz) 6 4 20 40 60 I d (mA) 80 Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA. P1 dB (dBm) 18 17 16 P1 dB 13 12 GP 5 11 Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 22 I d = 70 mA 5.5 20 5.0 P1 dB (dBm) Gp (dB) 18 NF (dB) I d = 60 mA 4.5 16 4.0 I d = 70 mA I d = 60 mA I d = 40 mA 0.2 0.3 0.5 1.0 2.0 NF (dB) 14 NF 4 3 –25 +25 TEMPERATURE (°C) I d = 40 mA 3.5 +85 12 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.1 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 04A Plastic Package Dimensions 12.39 ± 0.76 (0.488 ± 0.030) 4 GROUND 0.76 (0.030) DIA. RF INPUT 0.76 (0.030) 1 4.29 (0.169) 1 A 3 0.96 (0.038) RF OUTPUT & BIAS 2 GROUND 0.51 (0.020) NOTES: (UNLESS OTHERWISE SPECIFIED) 1. DIMENSIONS ARE IN MILLIMETERS (INCHES) 2. TOLERANCES mm .XX = ± 0.13 in .XXX = ± 0.005 0.20 ± 0.050 (0.008 ± 0.002) 2.54 ± 0.25 (0.100 ± 0.010) 3.68 (0.145) DIMENSIONS ARE IN MILLIMETERS (INCHES). www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies 5965-9556E (11/99)