MSA-9970

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-9970 Features • Open Loop Feedback Amplifier • Performance Flexibility with User Selected External Feedback for: Broadband Minimum Ripple Amplifiers Low Return Loss Amplifiers Negative Gain Slope Amplifiers • Usable Gain to 6.0 GHz • 16.0 dB Typical Open Loop Gain at 1.0 GHz • 14.5 dBm Typical P1 dB at 1.0 GHz • Hermetic Gold-ceramic Microstrip Package Description The MSA-9970 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed with high open loop gain and is intended to be used with external resistive and reactive feedback elements to create a variety of special purpose gain blocks. Applications include very broadband, minimum ripple amplifiers with extended low frequency performance possible through the use of a high valued external feedback blocking capacitor; extremely well matched (–20 dB return loss) amplifiers; and negative gain slope amplifiers for flattening MMIC cascades. 70 mil Package The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration USER SELECTABLE Rf Cf R bias VCC ≥ 10 V RFC (Optional) C block IN 1 2 Vd = 7.8 V 4 3 MSA C block OUT 6-489 5965-9668E MSA-9970 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65°C to 200°C Thermal Resistance[2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 88°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Power Gain[2] (|S21| 2) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. 14.5 8.0 Typ. 17.5 16.0 9.0 14.5 25.0 Max. 17.5 10.0 P1 dB IP3 Vd dV/dT Output Power at 1 dB Gain Compression[2] Third Order Intercept Point[2] Device Voltage Device Voltage Temperature Coefficient dBm dBm V mV/ °C 7.0 7.8 –16.0 8.6 Notes: 1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page. 2. Open loop value. Adding external feedback will alter device performance. 6-490 MSA-9970 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.02 .89 –1 17.5 7.51 179 –37.2 .014 0.05 .90 –3 17.5 7.47 177 –35.6 .017 0.1 .90 –6 17.4 7.45 174 –33.2 .022 0.2 .89 –12 17.4 7.43 168 –29.6 .033 0.4 .87 –24 17.2 7.27 156 –24.4 .061 0.6 .85 –36 17.0 7.06 145 –20.8 .091 0.8 .82 –47 16.6 6.78 134 –18.8 .115 1.0 .79 –59 16.2 6.49 124 –17.0 .141 1.5 .72 –86 15.3 5.79 100 –14.6 .186 2.0 .65 –113 14.2 5.10 77 –13.4 .215 2.5 .59 –133 13.0 4.45 61 –12.9 .227 3.0 .54 –155 11.6 3.79 42 –12.5 .236 3.5 .53 –174 10.3 3.28 26 –12.4 .239 4.0 .52 168 9.2 2.87 10 –12.5 .238 4.5 .53 152 8.0 2.51 –4 –12.6 .234 5.0 .55 140 6.9 2.21 –17 –12.8 .228 5.5 .55 130 5.8 1.94 –31 –13.2 .220 6.0 .55 121 4.6 1.70 –43 –13.6 .209 6.5 .56 114 3.5 1.50 –53 –13.8 .203 7.0 .56 107 2.6 1.34 –63 –14.0 .201 A model for this device is available in the DEVICE MODELS section. 4 34 43 61 63 58 52 44 29 16 7 –3 –14 –22 –30 –37 –44 –48 –54 –59 .93 .92 .93 .93 .91 .90 .87 .84 .74 .64 .57 .51 .45 .39 .34 .31 .30 .32 .37 .42 –1 –3 –6 –13 –27 –40 –53 –66 –96 –123 –143 –163 178 164 155 153 154 157 158 157 1.01 .83 .70 .39 .24 .21 .21 .24 .28 .34 .39 .46 .53 .59 .66 .72 .80 .88 .94 .97 Typical Performance, TA = 25°C (unless otherwise noted) 21 18 15 G p (dB) Id (mA) 12 9 6 10 3 0 .05 0 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 Vd (V) 8 10 FREQUENCY (GHz) 9 7 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) I d = 25 mA 30 P1 dB (dBm) 50 TC = +125°C TC = +25°C 40 T = –55°C C 19 17 15 13 11 I d = 35 mA I d = 45 mA 20 Figure 1. Open Loop Power Gain vs. Frequency, Id = 35 mA. 20 0.1 GHz 1.0 GHz 15 G p (dB) Figure 2. Device Current vs. Voltage. 17 G p (dB) Figure 3. Open Loop Output Power at 1 dB Gain Compression vs. Frequency. 16 15 10 4.0 GHz P1 dB (dBm) Gp 14 P1 dB 13 –55 –25 +25 +85 +125 5 10 20 30 40 50 Id (mA) TEMPERATURE (°C) Figure 4. Open Loop Power Gain vs. Current. Figure 5. Open Loop Output Power at 1 dB Gain Compression and Open Loop Power Gain vs. Case Temperature, f=1.0 GHz, Id = 35 mA. 6-491 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .004 ± .002 .10 ± .05 .070 1.70 .495 ± .030 12.57 ± .76 .035 .89 6-492