B772

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4 HSB772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Absolute Maximum Ratings (Ta=25°C) TO-126ML • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .................................................................................... 1.4 W Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................... -40 V BVCEO Collector to Emitter Voltage................................................................................... -30 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current (DC) ..................................................................................................... -3 A IC Collector Current (Pulse) ................................................................................................ -7 A IB Base Current (DC) ....................................................................................................... -0.6 A Electrical Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 200 80 55 Max. -1 -1 -0.5 -2 400 Unit V V V uA uA V V Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V VCB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz pF Classification Of hFE2 Rank Range Q 100-200 P 160-320 E 200-400 HSB772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C o Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 2/4 Saturation Voltage & Collector Current 10000 VCE(s at) @ IC=5IB 75 C o 25 C o Saturation Voltage (mV) 1000 75 C 100 o hFE 100 hFE @ VCE=2V 125 C 10 25 C o o 10 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=10IB Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=20IB Saturation Voltage (mV) Saturation Voltage (mV) 1000 75 C 100 125 C 10 o o 1000 75 C o o 25 C o 100 125 C o 25 C 10 1 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=40IB 1000 75 C o Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=10IB Saturation Voltage (mV) Saturation Voltage (mV) 75 C 1000 25 C o o 100 125 C 25 C o o 10 125 C o 1 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) HSB772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 3/4 Safe Operating Area 10 PT=1mS 1.6 1.4 Power Derating PD(W), Power Dissipation 100 PT=100mS Collector Current-IC (A) 1.2 1 0.8 0.6 0.4 0.2 1 PT=1S 0.1 1 10 0 0 50 o 100 150 200 Forward Biased Voltage (V) Ta( C), Ambient Temperature HSB772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking: Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 4/4 A H SB B D E F 3 2 I G 1 J M L K O H Date Code 772 Control Code C Style: Pin 1.Emitter 2.Collector 3.Base N 3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB772 HSMC Product Specification