H02N60E

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 H02N60 Series N-Channel Power Field Effect Transistor H02N60 Series Pin Assignment Tab 1 2 3 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Tab Tab 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 2 3 1 Features • Robust High Voltage Termination • Avalanc he Energy Specified • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 1 2 3 D G S H02N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H02N60I (TO-251) / H02N60J (TO-252) H02N60E (TO-220AB) PD H02N60F (TO-220FP) Derate above 25°C H02N60I (TO-251) / H02N60J (TO-252) H02N60E (TO-220AB) H02N60F (TO-220FP) Tj, Tstg EAS TL Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 0.4 0.4 0.33 -55 to 150 35 260 50 50 25 o Value 2 8 ±20 Units A A V W W/°C °C mJ °C H02N60I, H02N60J, H02N60E, H02N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-251 / TO-252 TO-220AB TO-220FP 62.5 Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 2/6 Units 2 2 3.3 °C/W °C/W ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C) Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=1A)* Forward Transconductance (VDS≥50V, ID=1A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad) (VDS=300V, ID=6A, VGS=10V)* (VDD=300V, ID=2A, RG=18Ω, VGS=10V)* VGS=0V, VDS=25V, f=1MHz Min. 600 2 1 Typ. 435 56 9.2 12 21 30 24 13 2 6 4.5 7.5 Max. 1 50 100 -100 4 4.4 22 nH nH nC ns pF Unit V uA uA nA nA V Ω mhos *: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Source-Drain Diode Symbol VSD ton trr Forward On Voltage(1) Forward Turn-On Time Reverse Recovery Time Characteristic IS=2A, VGS=0V, TJ=25 C IS=2A, VGS=0V, dIS/dt=100A/us o Min. - Typ. ** 340 Max. 1.6 - Units V ns ns **: Negligible, Dominated by circuit inductance H02N60I, H02N60J, H02N60E, H02N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension M A F C G 1 2 3 Date Code Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 3/6 Marking: a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J 02N60 Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source N H a5 L a2 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J A B C D a1 E Marking: M F y1 a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J 02N60 Date Code Control Code GI y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K a2 y2 H N L a2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J a1 O DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm H02N60I, H02N60J, H02N60E, H02N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension A Tab Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 4/6 M F a1 Marking: Pb Free Mark Pb-Free: " . " (Note) H Normal: None I C G Date Code 02N60 Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H1 K K1 L M a1 a2 Min. 6.35 4.80 1.30 5.40 6.75 0.50 0.40 0.90 2.20 0.40 - Max. 6.80 5.50 1.70 6.25 8.00 0.90 0.90 1.50 2.40 0.65 *2.30 L K K1 H1 a1 *: Typical, Unit: mm a2 a2 3-Lead TO-251 Plastic Package HSMC Package Code: I A B C D a1 E G Marking: M F y1 a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None I 02N60 Date Code Control Code I H y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K K1 H1 a2 y2 a2 y2 a1 DIM A B C D E F G H H1 I J K K1 M a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.20 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 *1.80 *9.30 *16.10 *0.80 0.96 *0.76 2.40 0.60 2.50 5o 3o 3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical, Unit: mm H02N60I, H02N60J, H02N60E, H02N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 5/6 E 0 2N60 Date Code Control Code H I G Tab P L J M 3 2 1 O N K Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α1 D α4 EO C Pb Free Mark Pb-Free: " . " (Note) Normal: None H F 0 2N60 Date Code Control Code α2 α3 α5 I N 3 G J Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 F 2 K 1 M L DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H02N60I, H02N60J, H02N60E, H02N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 6/6 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly