H50N03U

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H50N03U N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03U Pin Assignment Tab 3 2 1 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Features • RDS(on)=11mΩ@VGS=10V, ID=30A • RDS(on)=18mΩ@VGS=4.5V, ID=30A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM D G S Internal Schematic Diagram Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation @ TC=25oC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)*2 *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board Symbol VDS VGS ID IDM PD TJ,Tstg EAS RθJC RθJA Value 25 ±20 50 200 70 -55 to 150 300 2.1 55 Units V V A A W o C mJ O O C/W C/W Switching Test Circuit VDD Switching Waveforms ton td(on) toff tr td(off) 90% tf 90 % VIN VGEN RG G D VOUT Output, VOUT 10% 10% Inverted 90% 50% 50% S Input, VIN 10% Pulse Width H50N03U HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. ELectrical Characteristics Characteristic Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 2/5 Symbol Test Condition Min. Typ. Max. Unit BVDSS RDS(on) VGS(th) IDSS IGSS Rg gfs VGS=0V, ID=250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=24V, VGS=0V VGS=±20V, VDS=0V VDS=0V, VGS=1V at 1MHz VDS=10V, ID=35A 25 1 - 1.6 1 6 18 11 3 1 ±100 - V mΩ V uA nA Ω S Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz VDD=15V, RL=15Ω, ID=1A VGEN=10V, RG=24Ω VDS=15V, ID=35A, VGS=10V - 18.4 3.57 2.9 11.7 3.87 32.13 5.4 1176.3 268.43 142.67 nS pF nC IS VSD IS=20A, VGS=0V - 0.87 35 1.5 A V H50N03U HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Fig.1 Output Characteristic 80 VGS=5.0V,6.0V,10.0V 4.5V 60 VDS=10V Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 3/5 Fig.2 Transfer Characteristic ID, Drain-to-Source Current (A) 60 ID, Drain Source Current (A) 40 4.0V 40 25 C 20 TJ=125 C -55 C 0 o o o 3.5V 20 3.0V 0 0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5 V DS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig.3 On Resistance & Drain Current 40 35 60 Fig.4 On Resistance & Gate to Source Voltage ID=30A RDS(ON), On-Resistance (mohm) 30 25 VGS=4.5V 20 15 VGS=10.0V 10 5 0 0 20 40 60 80 RDS(ON), On-Resistance (mohm) 50 40 30 125 C 20 o 10 TJ =25 C 0 2 4 6 8 10 o ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) Fig.5 On Resistance & Junction Temperature 1.6 3000 VGS=10V ID=30A 1.4 Ciss Fig.6 Capacitance f=1MHz VGS=0V RDS(ON), On-Resistance (Normalized) . … RDS(ON), On-Resistance (mohm) 2500 2000 1.2 1500 1 1000 0.8 500 Coss, Crss 0.6 -50 -25 0 25 50 75 o 0 100 125 150 0 5 10 15 20 25 TJ, Junction Temperature ( C) VDS, Drain-to-Source Voltage (V) H50N03U HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-263 Dimension Marking: A a1 G C D r1 1 H 2 3 F P Q E R r2 I K 2-r2 a2 J K a2 a3 S O E N r2 F B a2 DP 3-r2 L M X Y 2Xr3 W D T U V Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 4/5 Pb Free Mark Pb-Free: " . " (Note) H Normal: None U 5 0N0 3 Date Code Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 T 3-Lead TO-263 Plastic Surface Mount Package HSMC Package Code: U ( ): Reference Dimension, Unit: mm DIM A B C D E F G H I J K Min. 9.70 1.00 9.00 4.70 15.00 1.20 1.17 0.70 2.34 Max. 10.10 1.40 (4.60) 9.40 5.10 15.60 (0.40) 1.60 1.37 0.90 2.74 DIM L M N O P Q R S T U V Max. 4.30 1.25 -0.05 2.20 1.90 2.24 0.45 9.80 - Max. 4.70 1.40 0.25 2.60 2.10 (0.75) 2.84 0.60 10.20 (7.00) (4.00) DIM W X Y a1 a2 a3 r1 r2 r3 DP Min. - Max. (7.20) (0.40) (0.90) (15o) (3o) 0o~3o (φ1.50) 0.30 (0.45) (0.20) Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H50N03U HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly