H9926S

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1 2 3 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 4 Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications H9926CS Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6 / 7 / 8: Drain Applications • Battery Protection • Load Switch • Power Management Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6 30 Units V V A A W W °C °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance Junction to Ambient *2 o 2 1.3 -55 to +150 62.5 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H9926S, H9926CS HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol • Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS • Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, ID=1A, VGS=4.5V RGEN=6Ω VDS=8V, VGS=0V, f=1MHz VDS=10V, ID=6A, VGS=4.5V Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VGS=0V, ID=250uA VGS=2.5V, ID=5.2A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=20V, VGS=0V VGS=±12V, VDS=0V VDS=10V, ID=6A 20 0.6 7 Characteristic Test Conditions Min. Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 2/4 Typ. Max. Unit 34 25 13 40 30 1.5 1 ±100 - V mΩ V uA nA S 4.86 0.92 1.4 562 106 75 8.1 9.95 21.85 5.35 ns pF nC • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A 1.7 1.2 A V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Switching Test Circuit VDD td(on) ton tr Switching Waveforms td(off) toff tf 90% 90% RD VIN VGEN RG G S Input, VIN 10% Pulse Width 50% 50% 90% D VOUT Output, VOUT 10% 10% Inverted H9926S, H9926CS HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SO-8 Dimension A G H9926S Marking: Pb Free Mark Pb-Free: " . " (Note) H Normal: None Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 3/4 S 8 B 7 6 5 C 4 J H I 9926 Control Code Pin 1 Index Date Code Pin1 Index Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2 2 3 H9926CS Marking: Pb Free Mark Pb-Free: " . " (Note) H Normal: None D S E Part A K L N O 9926C Control Code Pin 1 Index Date Code Part A DIM A B C D E F G H I J K L M N O Min. 4.85 3.85 5.80 1.22 0.37 3.74 1.45 4.80 0.05 0.30 0.19 0.37 0.23 0.08 0.00 Max. 5.10 3.95 6.20 1.32 0.47 3.88 1.65 5.10 0.20 0.70 0.25 0.52 0.28 0.13 0.15 M Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D Note: Green label is used for pb-free packing Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 *: Typical, Unit: mm F 8-Lead SO-8 Plastic Surface Mounted Package HSMC Package Code: S Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H9926S, H9926CS HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly