HE9012

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6103 Issued Date : 1992.09.09 Revised Date : 2002.02.18 Page No. : 1/4 HE9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features • High total power dissipation (PT: 625mW) • High collector current (IC: 500mA) • Complementary to HE9013 • Excellent linearity TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.................................................................................................... -40 V VCEO Collector to Emitter Voltage ................................................................................................ -20 V VEBO Emitter to Base Voltage......................................................................................................... -5 V IC Collector Current .................................................................................................................. -500 mA IBP Base Current...................................................................................................................... -100 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) *hFE1 *hFE2 Cob fT Min. -40 -20 -5 112 40 100 Typ. 180 Max. -100 -100 -0.6 -1.2 -0.9 300 8 Unit V V V nA nA V V V Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCE=-25V, IE=0 VEB=-3V, IC=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA VCB=-10V, f=1MHz VCE=-1V, IC=-10mA, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% pF MHz Classification on hFE1 Rank Range HE9012 G 112-166 H 144-202 I1 176-246 I2 214-300 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 VCE(s at) @ IC=10IB 125 C o Spec. No. : HE6103 Issued Date : 1992.09.09 Revised Date : 2002.02.18 Page No. : 2/4 Saturation Voltage & Collector Current hFE 100 25 C 75 C o o Saturation Voltage (mV) 100 75 C o 125 C o 25 C hFE @ VCE=1V 10 1 10 100 1000 10 0.1 1 10 100 1000 o Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 ON Voltage & Collector Current 1000 o 25 C o 25 C Saturation Voltage (mV) ON Voltage (mV) 75 C 125 C o o 75 C 125 C o o VBE(sat) @ IC=10IB VBE(ON) @ VCE=1V 100 0.1 1 10 100 1000 100 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current Cutoff Frequency (MHz).. . Capacitance (pF) VCE=1V 100 10 Cob 1 0.1 10 1 10 100 1 10 100 1000 Reverse-Biased Voltage (V) Collector Current (mA) HE9012 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6103 Issued Date : 1992.09.09 Revised Date : 2002.02.18 Page No. : 3/4 Safe Operating Area 10000 PT=1ms PD-Ta 700 600 Collector Current-IC (mA) 1000 PT=1s Power Dissipation-PD (mW) PT=100ms 500 400 300 200 100 100 10 1 1 10 100 0 0 50 100 o 150 200 Forward Voltage-VCE (V) Ambient Temperature-Ta ( C) HE9012 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6103 Issued Date : 1992.09.09 Revised Date : 2002.02.18 Page No. : 4/4 α2 Marking: H E 9012 Rank Control Code α3 C Style: Pin 1.Emitter 2.Base 3.Collector D H I E F G α1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HE9012 HSMC Product Specification