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HI3055

HI3055

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HI3055 - NPN EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
HI3055 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1994.01.25 Revised Date : 2001.05.31 Page No. : 1/2 HI3055 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3055 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ...................................................................................... 70 V BVCEO Collector to Emitter Voltage................................................................................... 60 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current ............................................................................................................ 10 A IB Base Current .................................................................................................................... 6 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 fT Min. 70 60 5 20 5 2 Typ. Max. 20 20 50 0.5 1.1 8 1.8 100 Unit V V V uA uA uA mA V V V Test Conditions IC=200mA, IE=0 IC=10mA, IB=0 IE=10mA, IC=0 VCB=70V, IE=0 VCE=70V, VEB(off)=1.5V VCE=30V, IB=0 VEB=5V, IC=0 IC=4A, IB=400mA IC=10A, IB=3.3A VCE=4V, IC=4A VCE=4V, IC=4A VCE=4V, IC=10A VCE=10V, IC=500mA, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% MHz HI3055 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension Marking : HSMC Logo Spec. No. : HE9004 Issued Date : 1994.01.25 Revised Date : 2001.05.31 Page No. : 2/2 A B C D Product Series Rank Part Number Date Code Ink Mark F 3 I E K 2 1 G Style : Pin 1.Base 2.Collector 3.Emitter H J 3-Lead TO-251 Plastic Package HSMC Package Code : I *:Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HI3055 HSMC Product Specification
HI3055
### 物料型号 - 型号:HI3055 - 规格编号:HE9004 - 发行日期:1994.01.25 - 修订日期:2001.05.31

### 器件简介 HI3055是一款NPN外延平面晶体管,适用于一般目的的放大和开关应用。

### 引脚分配 - 引脚1:基极(Base) - 引脚2:集电极(Collector) - 引脚3:发射极(Emitter)

### 参数特性 绝对最大额定值(Ta=25°C): - 存储温度:未提供具体数值 - 结温:未提供具体数值 - 最大耗散功率:未提供具体数值 - 总耗散功率:未提供具体数值 - 最大电压和电流: - BVCEO(集电极到发射极电压):60V - BVEBO(发射极到基极电压):5V - IC(集电极电流):10A - IB(基极电流):6A

特性(Ta=25°C): - BVCBO(集电极到基极电压):70V(最小值) - BVCEO(集电极到发射极电压):60V - BVEBO(发射极到基极电压):5V - ICBO(集电极漏电流):20μA(最大值) - ICEX(集电极饱和电流):20μA(最大值) - ICEO(集电极截止电流):50μA(最大值) - IEBO(发射极漏电流):0.5mA(最大值) - VCE(sat)1(饱和电压):1.1V(IC=4A, IB=400mA) - VCE(sat)2(饱和电压):8V(IC=10A, IB=3.3A) - VBE(on)(开启电压):1.8V(VCE=4V, IC=4A) - hFE1(电流增益):20-100(VCE=4V, IC=4A) - hFE2(电流增益):5(VCE=4V, IC=10A) - fT(截止频率):2MHz(VCE=10V, IC=500mA, f=1MHz)

### 功能详解 HI3055晶体管设计用于放大和开关应用,具有较高的电流增益和截止频率,适用于需要快速开关和放大信号的场合。

### 应用信息 适用于一般目的的放大和开关应用。

### 封装信息 - 封装类型:3-Lead TO-251 Plastic Package - HSMC封装代码:I - 尺寸:详细尺寸图和尺寸数据已提供,包括英寸和毫米单位。
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