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HI649A

HI649A

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HI649A - PNP EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 数据手册
  • 价格&库存
HI649A 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2002.04.03 Page No. : 1/3 HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage.................................................................................... -180 V BVCEO Collector to Emitter Voltage................................................................................. -160 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current........................................................................................................... -1.5 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -10 -1 -1.5 200 Unit V V V uA V V Test Conditions IC=-1mA IC=-10mA IE=-1mA VCB=-160V IC=-500mA, IB=-50mA VCE=-5V, IC=-150mA VCE=-5V, IC=-150mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V,f=1MHz,IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz pF Classification Of hFE1 Rank Range B 60-120 C 100-200 HI649A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 VCE(sat) @ IC=10IB Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2002.04.03 Page No. : 2/3 Saturation Voltage & Collector Current 125 C o 100 Saturation Voltage (mV) 75 C 25 C o o 1000 hFE 125 C 75 C o o 10 hFE @ VCE=5V 100 25 C o 1 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 10000 VBE(ON) @ VCE=5V ON Voltage (mV) 75 C 1000 25 C o o 125 C o 100 1 10 100 1000 10000 Collector Current-IC (mA) HI649A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension Marking: Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2002.04.03 Page No. : 3/3 A B C D H I 649A Date Code Rank Control Code F 3 I E K 2 1 G Style: Pin 1.Base 2.Collector 3.Emitter H J 3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HI649A HSMC Product Specification
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