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HJ2955

HJ2955

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HJ2955 - PNP EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
HJ2955 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 1/4 HJ2955 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2955 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-252 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)..................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................... -70 V BVCEO Collector to Emitter Voltage................................................................................... -60 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current ........................................................................................................... -10 A IB Base Current .................................................................................................................... -6 A Characteristics (Ta=25°C) Symbol BVCEO BVCBO BVEBO ICBO ICEX ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 fT Min. -60 -70 -5 20 5 2 Typ. Max. -20 -20 -50 -0.5 -1.1 -8 -1.8 100 Unit V V V uA uA uA mA V V V Test Conditions IC=-30mA, IB=0 IC=-1mA, IE=0 IE=-1mA, IC=0 VCB=-70V, IE=0 VCE=-70V, VEB(off)=-1.5V VCE=-30V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-400mA IC=-10A, IB=-3.3A IC=-4A, VCE=-4V IC=-4A, VCE=-4V IC=-10A, VCE=-4V VCE=-10V, IC=-500mA, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz HJ2955 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 hFE @ VCE=4V 10000 VCE(sat) @ IC=10IB Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 2/4 Saturation Voltage & Collector Current 125 C o Saturation Voltage (mV) 1000 75 C o hFE 100 25 C 75 C o o 100 125 C o 25 C o 10 10 100 1000 10000 10 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=3IB 10000 ON Voltage & Collector Current VBE(ON) @ VCE=4V Saturation Voltage (mV) ON Voltage (mV) 1000 75 C 1000 25 C 125 C o o o 75 C 100 125 C o o o 25 C 10 10 100 1000 10000 100 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Switching Time & Collector Current 10.00 VCC=30V, IC=10IB1 = -10IB2 1000 Capacitance & Reverse-Biased Voltage Switching Times (us).. . 1.00 Tstg Capacitance (pF) 100 Cob Ton 0.10 Tf 0.01 0.1 1.0 10.0 10 0.1 1 10 100 Collector Current (A) Reverse-Biased Voltage (V) HJ2955 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 3/4 Safe Operating Area 100000 PT=1ms Collector Current-IC (mA) 10000 PT=100ms PT=1s 1000 100 10 1 10 100 Forward Voltage-VCE (V) HJ2955 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension A C Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 4/4 Marking: H J 2955 Date Code Control Code B D L F G Style: Pin 1.Base 2.Collector 3.Emitter 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HJ2955 HSMC Product Specification
HJ2955
1. 物料型号: - 型号:HJ2955 - 制造商:HI-SINCERITY MICROELECTRONICS CORP. - 规格编号:HE6003 - 发行日期:1994.10.04 - 修订日期:2002.04.03

2. 器件简介: - HJ2955是一种PNP外延平面晶体管,设计用于一般用途的放大和开关应用。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:集电极(Collector) - 引脚3:发射极(Emitter)

4. 参数特性: - 最大温度:存储温度上限为150°C,结温最高为150°C。 - 最大功率耗散:在25°C环境温度下,最大耗散功率为0W。 - AC最大电压和电流:BVCEO(集电极到发射极电压)为-60V,BVEBO(发射极到基极电压)为-5V,IC(集电极电流)为-6A。

5. 功能详解: - 工作电压范围从-70V到-5V,具有不同的集电极电流和基极电流参数。 - 饱和电压和开启电压有不同的典型值,如VCE(sat)1在IC=-4A, IB=-400mA时为-1.1V,VCE(sat)2在IC=-10A, IB=-3.3A时为-8V。 - 电流增益hFE1在IC=-4A, VCE=-4V时为20至100,hFE2在IC=-10A, VCE=-4V时为5至100。 - 截止频率fT在VCE=-10V, IC=-500mA, f=1MHz时为2MHz。

6. 应用信息: - 该晶体管适用于一般用途的放大和开关应用。

7. 封装信息: - 封装类型:TO-252 - 封装代码:J - 引线材料:42合金,焊料镀层 - 模塑化合物:环氧树脂家族,UL94V-0可燃性固体燃烧等级
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