HLB1211

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9027-B Issued Date : 1996.11.06 Revised Date : 2000.11.01 Page No. : 1/3 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 10 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 600 V BVCEO Collector to Emitter Voltage................................................................................. 400 V BVEBO Emitter to Base Voltage ........................................................................................... 6 V IC Collector Current (DC)............................................................................................... 300 mA IC Collector Current (Pulse)........................................................................................... 600 mA IB Base Current (DC)....................................................................................................... 40 mA IB Base Current (Pulse)................................................................................................. 100 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 Min. 600 400 6 8 10 Typ. Max. 10 10 10 400 750 1 36 Unit V V V uA uA uA mV mV V Test Conditions IC=100uA IC=10mA IE=10uA VCB=550V VCB=400V VEB=6V IC=50mA, IB=10mA IC=100mA, IB=20mA IC=50mA, IB=10mA VCE=10V, IC=10mA VCE=10V, IC=50mA *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Dc Current Gain & Collector Current 100 100000 Spec. No. : HE9027-B Issued Date : 1996.11.06 Revised Date : 2000.11.01 Page No. : 2/3 Saturation Voltage & Collector Current hFE @ VCE=10V 10 Saturation Voltage (mV) 10000 hFE 1000 VBE(sat) @ IC=5IB 100 VCE(sat) @ IC=5IB 1 1 10 100 1000 10 1 10 100 1000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 1000 Capacitance Reverse Biased Voltage Collector Current (mA) On Voltage-Bton 100 Cib 1000 Bton @ VCE=10V 10 Cob 100 0 100 200 300 400 500 600 1 0.1 1 10 100 Collector Current (mA) Reverse Biased Voltage (V) Switching Time & Collector Current 10 VCC=100V, IC=5IB1=-5IB2 10000 Safe Operating Area Switching Time (us) Collector Current (mA) 1000 Ton 1 Tstg 100 PT=1ms PT=100ms PT=1s Tf 0.1 0 100 200 300 400 500 600 10 0 50 100 150 200 250 Collector Current (mA) Forward Biased Voltage (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension Marking : HSMC Logo Spec. No. : HE9027-B Issued Date : 1996.11.06 Revised Date : 2000.11.01 Page No. : 3/3 A B C D Product Series Rank Part Number Date Code Ink Mark F 3 I E K 2 1 G Style : Pin 1.Base 2.Collector 3.Emitter H J 3-Lead TO-251 Plastic Package HSMC Package Code : I *:Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 • Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification