HLB123SA

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 1/5 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .............................................................................................................................................. -50 ~ +150 °C Junction Temperature ....................................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................................... 20 W • Maximum Voltages and Currents (TC=25°C) VCBO Collector to Emitter Voltage ........................................................................................................................................ 700 V VCEO Collector to Emitter Voltage ........................................................................................................................................ 400 V VEBO Emitter to Base Voltage................................................................................................................................................... 9 V IC Collector Current ........................................................................................................................................... Continuous 1.2 A IB Base Current................................................................................................................................................... Continuous 0.3A Electrical Characteristics (TC=25°C) Symbol BVCBO BVCEO IEBO ICEX *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *VBE(sat) *hFE1 *hFE2 Min. 700 400 8 5 Typ. Max. 1 1 500 1 3 1 1.2 40 25 Unit V V mA mA mV V V V V IB=1mA IC=10mA VEB=9V VCE=700V, VBE(off)=1.5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=0.3A, VCE=5V IC=1A, VCE=5V *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Test Conditions HLB123SA HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve I C & hFE 100 10 Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 2/5 I C & VBE(sat) VCE=5V VBE(sat) (V) hFE 10 1 VBE(sat) @ IC=5IB 1 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 IC (A) IC (A) I C & VBE(sat) 10 100 I C & VCE(sat) 10 VBE(sat) (V) VCE(sat) (V) VCE(sat) @ IC=5IB 1 1 VBE(sat) @ IC=4IB 0.1 0.1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 IC (A) IC (A) I C & VCE(sat) 10 100 Capacitance & Reverse-Biased Voltage 1 Capacitance (pF) VCE(sat) @ IC=4IB VCE(sat) (V) 10 0.1 0.01 0.001 1 0.01 0.1 1 10 0.1 1 10 100 IC (A) Reverse-Biased Voltage (V) HLB123SA HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 3/5 I C & Ton 10 10 I C & Ts 1 Ton (us) 1 VCE=125V IC=5IB1=-5IB2 TS (us) VCE=125V IC=5IB1=-5IB2 0.1 0.1 1 10 0.1 0.1 1 10 0.01 IC (A) IC (A) I C & Toff 1 TS (us) VCE=125V IC=5IB1=-5IB2 0.1 0.1 1 10 IC (A) HLB123SA HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension α2 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 4/5 A B 1 2 3 H LB 123SA Control Code α3 Date Code Note: Green label is used for pb-free packing C D Pin Style: 1.Emitter 2.Collector 3.Base Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I α1 α2 α3 Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5° *2° *2° H I E F G *: Typical, Unit: mm α1 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm H2 H2 H2A H2A D2 A H3 H4 H L L1 H1 F1 F2 T2 T T1 P1 P P2 D1 D W1 W Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB123SA HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly