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HM3019

HM3019

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HM3019 - NPN EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
HM3019 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9526-A Issued Date : 1998.07.01 Revised Date : 2000.10.01 Page No. : 1/2 HM3019 NPN EPITAXIAL PLANAR TRANSISTOR Description This device is designed for use as general purpose amplifier and switching requiring collector currents 1A Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 140 V VCEO Collector to Emitter Voltage ..................................................................................... 80 V VEBO Emitter to Base Voltage ............................................................................................. 7 V IC Collector Current .............................................................................................................. 1 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 140 80 7 50 90 100 50 15 100 Typ. Max. 50 50 0.2 1.1 300 12 Unit V V V nA nA V V Test Conditions IC=100uA IC=30mA IE=100uA VCB=90V VEB=5V IC=150mA, IB=15mA IC=150mA, IB=15mA IC=0.1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V IC=1000mA, VCE=10V IC=50mA, VCE=10V, f=100MHz VCE=10V, f=1MHz, IE=0 *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% MHz pF HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-89 Dimension Marking : Spec. No. :HE9526-A Issued Date : 1998.07.01 Revised Date : 2000.10.01 Page No. : 2/2 C H Date Code Part Number HSMC Logo Package Code B 1 E F G A 2 3 D Style : Pin 1.Base 2.Collector 3.Emitter I 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code : M *:Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.0141 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.52 2.96 3.04 1.40 1.60 0.35 0.41 Notes : 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 • Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification
HM3019
物料型号: - 型号为HM3019,是NPN外延平面晶体管。

器件简介: - 该器件设计用于作为通用放大器和开关使用,要求集电极电流为1A。

引脚分配: - SOT-89封装,引脚1为基极(Base),引脚2为集电极(Collector),引脚3为发射极(Emitter)。

参数特性: - 绝对最大额定值: - 存储温度:-55℃至+150℃ - 结温:+150℃ - 最大总功耗:1.2W(Ta=25℃) - 最大电压和电流(Ta=25℃): - VCBO(集电极到基极电压):140V - VCEO(集电极到发射极电压):80V - VEBO(发射极到基极电压):7V - IC(集电极电流):1A - 特性(Ta=25℃): - BVCBO:140V(IC=100μA) - BVCEO:80V(IC=30mA) - BVEBO:7V(IE=100μA) - ICBO:50nA(VCB=90V) - IEBO:50nA(VEB=5V) - VCE(sat):0.2V(IC=150mA, IB=15mA) - VBE(sat):1.1V(IC=150mA, IB=15mA) - hFE(电流增益):有多个测试条件,范围从50到300 - fT:100MHz(IC=50mA, VCE=10V, f=100MHz) - Cob:12pF(VCE=10V, f=1MHz, IE=0)

功能详解: - HM3019芯片是一个NPN型晶体管,适用于需要较高集电极电流(1A)的通用放大和开关应用。

应用信息: - 由于其高电流和电压特性,HM3019适用于需要较大功率处理的应用,例如电源管理、电机控制等。

封装信息: - 封装类型为3引脚SOT-89塑料表面贴装封装,具体尺寸和公差根据HSMC的规格书。
HM3019 价格&库存

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