HMPSA43

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6334-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/3 HMPSA43 NPN SILICON TRANSISTOR Description The HMPSA43 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • For Complementary Use with PNP Type HMPSA93 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 200 V VCEO Collector to Emitter Voltage ................................................................................... 200 V VEBO Emitter to Base Voltage ............................................................................................. 6 V IC Collector Current ...................................................................................................... 500 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 200 200 6 25 40 40 50 Typ. Max. 100 100 350 900 4 Unit V V V nA nA mV mV Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V IC=10mA, VCE=10V IC=30mA, VCE=10V IC=10mA, VCE=20V, f=100MHZ VCB=20V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% MHz pF Classification Of hFE2 & VCE(sat) Rank NS N hFE1 >80 >25 hFE2 >120 >40 hFE3 >120 >40 VCE(sat)