HPN2369A

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 1/4 HPN2369A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2369A is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High Speed Switching Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .......................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................. +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .............................................................................................. 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................................... 40 V VCES Collector to Emitter Voltage..................................................................................................... 40 V VCEO Collector to Emitter Voltage .................................................................................................... 15 V VEBO Emitter to Base Voltage ......................................................................................................... 4.5 V IC Collector Current ..................................................................................................................... 200 mA ICM Peak Collector Current ......................................................................................................... 300 mA Characteristics (Ta=25°C) Symbol BVCBO BVCES BVEBO IEBO ICBO ICES *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 40 40 4.5 700 40 30 20 500 Typ. Max. 100 400 400 200 250 300 500 850 120 4 Unit V V V nA nA nA mV mV mV mV mV Test Conditions IC=10uA, IE=0 IC=10uA, VBE=0 IE=10uA, IC=0 VEB=4V, IC=0 VCB=20V, IE=0 VCE=40V, VBE=0 IC=10mA, IB=1mA IC=30mA, IB=3mA IC=10mA, IB=10mA IC=100mA, IB=10mA IC=10mA, IB=1mA IC=10mA, VCE=0.35V IC=30mA, VCE=0.4V IC=100mA, VCE=1V IC=10mA, VCE=10V, f=100MHz VCB=5V, f=1MHz MHz pF *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% HPN2369A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 1 Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 2/4 Saturation Voltage & Collector Current VBE(sat) @ IC=10IB VCE=1V 10 Saturation Voltage (V) hFE 0.1 VCE(sat) @ IC=10IB 1 0.1 1 10 100 1000 0.01 0.1 1 10 100 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 1 10 Capacitance & Reverse-Biased Voltage VBE(on) @ VCE=1V Capacitance (pF) On Voltage (mV) Cob 0.1 0.1 1 10 100 1 0.1 1 10 100 Collector Current (mA) Reverse-Biased Voltage (V) Cutoff Frequency & Collector Current 10000 10000 Safe Operating Area 1000 Collector Current-IC (mA) Cutoff Frequency (GHz) 1000 PT=1ms PT=100ms PT=1s 100 fT @ VCE=10V 100 10 10 1 0.1 1 10 100 1 1 10 100 Collector Current-IC (mA) Forward Voltage-VCE (V) HPN2369A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 3/4 PD-Ta 700 600 Power Dissipation-PD(mW) 500 400 300 200 100 0 0 20 40 60 80 100 o 120 140 160 Ambient Temperature-Ta( C) HPN2369A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 4/4 α2 Marking: HSMC Logo Part Number Date Code Rank Product Series α3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark α1 3-Lead TO-92 Plastic Package HSMC Package Code : A Style: Pin 1.Emitter 2.Base 3.Collector *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HPN2369A HSMC Product Specification