HSA733

厂商：
HSMC
封装：
描述：
HSA733 - PNP EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

数据手册：

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数据手册
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HSA733 数据手册

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2002.03.26 Page No. : 1/4 HSA733 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA733 is designed for use in driver stage of AF amplifier applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -60 V VCEO Collector to Emitter Voltage ..................................................................................... -50 V VEBO Emitter to Base Voltage ............................................................................................. -5 V IC Collector Current ...................................................................................................... -100 mA IB Base Current .............................................................................................................. -20 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE fT Cob Min. -60 -50 -5 -0.55 90 100 Typ. -0.18 -0.62 200 180 4.5 Max. -0.1 -0.1 -0.3 -0.7 600 6 Unit V V V uA uA V V MHz pF Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-60V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA VCE=-6V, IC=-1mA VCE=-6V, IC=-1mA VCE=-6V, IC=-10mA VCB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank Range R 90-180 Q 135-270 P 200-400 K 300-600 HSA733 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2002.03.26 Page No. : 2/4 Saturation Voltage & Collector Current 125 C o 25 C o Saturation Voltage (mV) 75 C 100 o 125 C o hFE 100 75 C o 25 C VCE(sat) @ IC=10IB o hFE @ VCE=6V 10 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 1000 25 C o Cutoff Frequancy & Collector Current 1000 Cutoff Frequance (MHz).. . VCE=6V 100 ON Voltage (mV) 75 C o o 125 C VBE(ON) @ VCE=6V 10 100 0.1 1 10 100 1000 1 1 10 100 Collector Current-IC (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 10 10000 PT=1ms 1000 Safe Operating Area Cob Collector Current-IC (mA) PT=100ms Capacitance (pF) PT=1s 100 10 1 0.1 1 10 100 1 1 10 100 Reverse-Biased Voltage (V) Forward Voltage-VCE (V) HSA733 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2002.03.26 Page No. : 3/4 PD-Ta 300 250 Power Dissipation-PD (mW) 200 150 100 50 0 0 50 100 o 150 200 Ambient Temperature-Ta ( C) HSA733 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2002.03.26 Page No. : 4/4 α2 Marking: H SA 733 Rank Control Code α3 C Style: Pin 1.Emitter 2.Collector 3.Base D H I E F G α1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSA733 HSMC Product Specification

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HSA733

1. 物料型号： - 型号：HSA733 - 规格编号：HE6507 - 发布日期：1992年12月16日 - 修订日期：2002年3月26日

2. 器件简介： - HSA733设计用于音频放大器驱动级应用。

3. 引脚分配： - 引脚1：发射极（Emitter） - 引脚2：集电极（Collector） - 引脚3：基极（Base）

4. 参数特性： - 最大工作温度：结温 - 最大耗散功率：无具体数值 - 最大电压和电流（Ta=25°C）： - VCEO：-50V（集电极到发射极电压） - VEBO：-5V（发射极到基极电压） - IC：-100mA（集电极电流） - IB：-20mA（基极电流）

5. 功能详解： - 特性值（Ta=25°C）： - BVCBO：-60V（集电极开路电压） - BVCEO：-50V（集电极发射极开路电压） - BVEBO：-5V（发射极基极开路电压） - ICBO：-0.1uA（集电极基极反向电流） - IEBO：-0.1uA（发射极基极反向电流） - VCE(sat)：0.18V至0.3V（饱和压降） - VBE(on)：0.55V至0.7V（开启电压） - hFE：90至600（晶体管电流增益） - fT：100至180MHz（截止频率） - Cob：4.5至6pF（输出电容）

6. 应用信息： - HSA733适用于音频放大器的驱动阶段。

7. 封装信息： - 封装类型：3引脚TO-92塑料封装 - 封装代码：A - 标记：引脚1为发射极，引脚2为集电极，引脚3为基极 - 材料：铅框架使用42合金，镀锡；模具化合物为环氧树脂家族，UL94V-0可燃性固体燃烧等级。

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