HSB1386I

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 HSB1386I LOW FREQUENCY TRANSISTOR (-20V, -4A) Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics. TO-251 Structure Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings (TA=25°C) Symbol VCBO VCEO VEBO IC PD Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (TC=25oC) Junction Temperature Storage Temperature Parameter Limits -30 -20 -6 -4 -10 20 150 -55~+150 Unit V V V A A(Pulse)* W o o C C Electrical Characteristics (TA=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter B reakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Min. Typ. Max. Unit -30 -20 -6 82 110 30 -0.5 -0.5 -1 580 pF uA uA V V V Test Conditions IC=-50uA IC=-1mA IC=-50uA VCB=-20V VEB=-5V IC/IB=-4A/-0.1A VCE=-2V, IC=-0.5A MHz VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range P 82-180 Q 120-270 R 180-390 E 370-580 HSB1386I HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 2/4 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 VCE(sat) @ IC=20IB hFE hFE @ VCE=2V VCE(sat) @ IC=40IB 10 100 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 1000 Capacitance & Reverse-Biased Voltage Saturation Voltage (mV) 1000 Capacitance (pF) 100 Cob VBE(sat) @ IC=20IB 100 1 10 100 1000 10000 10 0.1 1 10 100 Collector Current-IC (mA) Reverse Biased Voltage (V) Power Derating 25 20 PD(W) , Power Dissipation 15 10 5 0 0 20 40 60 80 100 o Tc( C) , Ambient Temperature 120 140 HSB1386I HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension A Tab Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 3/4 M F a1 Marking: Pb Free Mark Pb-Free: " . " (Note) H Normal: None C G Date Code SB 1386 I Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Base 2/Tab.Collector 3.Emitter Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H1 K K1 L M a1 a2 Min. 6.35 4.80 1.30 5.40 6.75 0.50 0.40 0.90 2.20 0.40 - Max. 6.80 5.50 1.70 6.25 8.00 0.90 0.90 1.50 2.40 0.65 *2.30 L K K1 H1 a1 *: Typical, Unit: mm a2 a2 3-Lead TO-251 Plastic Package HSMC Package Code: I A B C D a1 E G Marking: M F y1 a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None SB 1386 I Control Code I H y1 y1 Date Code Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K K1 H1 a2 y2 a2 y2 a1 DIM A B C D E F G H H1 I J K K1 M a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.20 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 *1.80 *9.30 *16.10 *0.80 0.96 *0.76 2.40 0.60 2.50 5o 3o 3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical, Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB1386I HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly