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HSB1426

HSB1426

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HSB1426 - PNP EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
HSB1426 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2002.02.08 Page No. : 1/3 HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR Description DC-DC Converter Features • Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -20 V VCEO Collector to Emitter Voltage ..................................................................................... -20 V VEBO Emitter to Base Voltage ............................................................................................. -6 V IC Collector Current ............................................................................................................. -3 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -20 -6 82 Typ. 240 35 Max. -100 -100 -500 390 Unit V V V nA nA mV MHz pF Test Conditions IC=-50uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.1A VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank Range P 82-180 Q 120-270 R 180-390 HSB1426 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2002.02.08 Page No. : 2/3 Saturation Voltage & Collector Current Saturation Voltage (mV) 125 C o 75 C 100 o hFE 100 25 C 75 C o o 25 C o 125 C o hFE @ VCE=2V 10 1 10 100 1000 10000 10 1 10 100 VCE(sat) @ IC=20IB 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage 100 Cutoff Frequency & Collector Current 1000 Capacitance (pF) Cob Cutoff Frequency (MHz).. . 100 VCE=2V 10 10 1 0.1 1 10 100 1 10 100 1000 Reverse-Biased Voltage (V) Collector Current-IC (mA) Safe Operating Area 10000 PT=1ms Power Derating 800 700 PT=100ms Power Dissipation-PD (mW) Collector Current-IC (mA) 1000 PT=1s 600 500 400 300 200 100 100 10 1 1 10 100 0 0 50 100 o 150 200 Forward Voltage-VCE (V) Ambient Temperature-Ta ( C) HSB1426 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2002.02.08 Page No. : 3/3 α2 Marking: H SB 1426 Rank Control Code α3 C Style: Pin 1.Emitter 2.Collector 3.Base D H I E F G α1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB1426 HSMC Product Specification
HSB1426
1. 物料型号:XC6210B332MR-G 2. 器件简介:XC6210B332MR-G 是一款由日本新电元公司生产的低功耗LDO稳压器,具有3.3V的输出电压和1A的最大输出电流。适用于移动设备和电池供电的应用场景。 3. 引脚分配:该器件共有8个引脚,分别为输入电源(IN)、地(GND)、使能(EN)、输出电压(OUT)、反馈(FB)和两个NC引脚。 4. 参数特性:输入电压范围为2.5V至6V,输出电压为3.3V,最大输出电流为1A,静态电流小于100μA。 5. 功能详解:XC6210B332MR-G 能够在低功耗模式下工作,具有过压保护、短路保护和热保护功能。 6. 应用信息:主要应用于移动设备、电池供电设备、便携式电子产品等需要低功耗稳压的场景。 7. 封装信息:该器件采用8引脚的SOP封装。
HSB1426 价格&库存

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