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HSC3953S

HSC3953S

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HSC3953S - NPN EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
HSC3953S 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2001.01.01 Page No. : 1/3 HSC3953S NPN EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amplifier applications. Features • High fT: fT=500MHz • High breakdown voltage: VCEO=120V min • Small reverse transfer capacitance Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ..................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 120 V VCEO Collector to Emitter Voltage ................................................................................... 120 V VEBO Emitter to Base Voltage ............................................................................................. 3 V IC Collector Current ...................................................................................................... 200 mA Icp Peak Collector Current ............................................................................................ 400 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 120 120 3 60 40 Typ. 160 400 2.1 Max. 0.1 0.1 1 1 320 Unit V V V uA uA V V Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VEB=2V, IC=0 IC=30mA, IB=3mA IC=30mA, IB=3mA VCE=10V, IC=10mA VCE=10V, IC=100mA VCE=10V, IC=50mA, IE=0, VCB=30V, f=1MHZ *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% MHz pF Classification of hFE1 Rank Range D 60-120 E 100-200 F 160-320 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2001.01.01 Page No. : 2/3 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 VCE=10V hFE 100 VCE(sat) @ IC=10IB 10 10 0.1 1 10 100 1000 1 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) Saturation Voltage & Collector Current 1000 10 Output Capacitance & Reverse-Biased Voltage VBE(sat) @ IC=10IB Saturation Voltage (mV) Capacitance (Pf) Cob 100 0.1 1 10 100 1000 1 0.1 1 10 100 Collector Current (mA) Reverse-Biased Voltage (V) Safe Operating Area 1000 1000 900 PT=1ms PT=100ms Power Derating Power Dissipation-PD(mW) 800 700 600 500 400 300 200 100 Collector Current (A) PT=1s 100 10 1 10 100 1000 0 0 20 40 60 80 100 o 120 140 160 Forward Voltage (V) Ambient Temperature-Ta( C) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2001.01.01 Page No. : 3/3 α2 Marking : HSMC Logo Part Number Date Code Rank Product Series α3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Emitter 2.Collector 3.Base α1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 • Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification
HSC3953S
物料型号: - 型号:HSC3953S

器件简介: - HSC3953S是一款NPN EPITAXIAL PLANAR TRANSISTOR,适用于高清晰度CRT显示器视频输出和宽带放大器应用。

引脚分配: - 引脚1:Emitter(发射极) - 引脚2:Collector(集电极) - 引脚3:Base(基极)

参数特性: - 高fT:fT=500MHz - 高击穿电压:VCEO=120V(最小值) - 小的反向传输电容

功能详解: - 该晶体管在存储时的温度范围为-55°C至+150°C,结温为150°C。 - 最大总功率耗散为900mW(在25°C的环境温度下)。 - 最大电压和电流值包括:VCBO(集电极到基极电压)为120V,VCEO(集电极到发射极电压)为120V,Icp(峰值集电极电流)为400mA,VEBO(发射极到基极电压)为3V,IC(集电极电流)为200mA。

应用信息: - 适用于高清晰度CRT显示器视频输出和宽带放大器应用。

封装信息: - 封装类型为TO-92。 - 标记方式:Pin 1.Emitter 2.Collector 3.Base - HSMC封装代码:A
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