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TO-220AB

TO-220AB

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    TO-220AB - Three Quadrant Triac - Hi-Sincerity Mocroelectronics

  • 数据手册
  • 价格&库存
TO-220AB 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 1/4 HBT139XE Three Quadrant Triac Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Quick Reference Data Part No. HBT139DE VDRM(V) 600 IT(RMS)(A) 16 ITSM (A) 140 TO-220AB Quadrant I - II - III Pin Configuration Pin 1 2 3 tab Description Main terminal 1 Main terminal 2 Gate Main terminal 2 tab 123 G Symbol T2 T1 Limtiing Values Symbol VDRM IT(RMS) ITSM I2t Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering T2+ G+ T2+ GT2- GT2- G+ Peak gate current Peak gate voltage Peak gate power Average gate power Storage Temperature Range Operating junction temperature Min. -40 Max. 600 16 140 98 50 50 50 2 10 5 0.5 150 125 Units V A A A2S A/us A/us A/us A/us A V W W °C °C dIT/dt IGM VGM PGM PG(AV) Tstg Tj HBT139XE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Static Characteristics (Ta=25°C) Symbol Parameter Conditions VD=6V, RL=10Ω, T2+ G+ VD=6V, RL=10Ω, T2+ GVD=6V, RL=10Ω, T2- GVD=6V, RL=10Ω, T2- G+ VD=6V, RL=10Ω, T2+ G+ VD=6V, RL=10Ω, T2+ GVD=6V, RL=10Ω, T2- GVD=6V, RL=10Ω, T2- G+ VD=12V, IGT=0.1A IT=25A VD=6V, RL=10Ω, T2+ G+ VD=6V, RL=10Ω, T2+ GVD=6V, RL=10Ω, T2- GVD=6V, RL=10Ω, T2- G+ VD=VDRM Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 2/4 IGT Gate Trigger Current IL Latching Current IH VT Holding Current On-state Voltage VGT Gate Trigger Voltage ID Off-state Leakage Current Rank V 25 25 25 20 30 30 30 1.5 1.5 1.5 1.5 500 Unit mA mA mA mA mA mA mA mA mA V V V V V uA Static Characteristics Symbol dVD/dt tgt Parameter Critical rate of rise of off-state voltage Gate controlled turn-on time Conditions VDM=67% VDRM(max); Tj= 125°C; exponential waveform; gate open circuit ITM=6A; VD=VDRM(max); IG=0.1A; dIG/dt=5A/us Min. Typ. 50 2 Max. Unit V/us us Thermal Resistances Symbol Rth j-mb Rth j-a Parameter Thermal resistance junction to mounting base Thermal resistance junction to ambient Conditions Full cycle Half cycle In free air Min. Typ. 60 Max. 1.2 1.7 Unit K/W K/W K/W HBT139XE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Normalised Gate Trigger Current IGT(Ta)/IGT(25 C), Versus Junction Temperature Ta 1.1 1.0 0.9 T2+/G+ T2+/GT2-/Go Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 3/4 Typical & Mmaximum On-State Characteristic 15 14 13 12 11 10 9 IT/A 8 7 6 5 4 3 2 1 0 typ 25ºC 125ºC IGT/IGT(25 C) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 20 40 60 o o 80 100 120 140 Ta( C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 VT/V Normalised Gate Trigger Voltage VGT(Ta)/VGT(25 C), Versus Junction Temperature Ta 1.6 T2+/G+ 1.4 T2-/G2.0 2.5 o Normalised Holding Current IH(Ta)/IH(25 C), Versus Junction Temperature Ta o VGT/VGT(25 C) 1.2 o IL/IL(25 C) 1.5 1.0 o 1.0 0.8 0.5 0.6 0.4 -50 0 50 100 150 0.0 0 20 40 Ta( C) o 60 80 o Ta/( C) 100 120 140 Normalised Latching Current IL(Ta)/IL(25 C), Versus Junction Temperature Ta 3 o 2.5 2 IL/IL(25 C) o 1.5 1 0.5 0 0 25 50 75 100 125 150 Ta( C) o HBT139XE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension A D B E C Marking: Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 4/4 H 139 Date Code BT Serial Code Rank Control Code H I G Tab P M 3 2 1 O N K Style: Pin 1. Main terminal 1 2. Main terminal 2 3. Gate Tab connected to main terminal 2 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBT139XE HSMC Product Specification
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