1SS344
SOT-23
SCHOTTKY BARRIER DIODE
FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching
MARKING: H9 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol VR IO IFM IFSM PD RθJA Tj Tstg Parameter DC Blocking Voltage Forward Continuous Current Peak Forward Current Surge Current@10ms Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 20 500 1.5 5 200 500 125 -55~+150 Unit V mA A A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current Symbol V(BR) IR IR=100μA VR=10V VR=20V IF=10mA Forward voltage VF IF=100mA IF=500mA Total capacitance Reverse recovery time Ctot trr VR=0V, f=1MHz IF= IR=50mA, VR=6V 120 20 Test conditions Min 20 20 100 0.35 0.43 0.55 pF ns V Typ Max Unit V μA
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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