1SS401

1SS4 01 Schottoky DIODES FEATURES Low forward voltage : VF=0.38V(typ.) Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.) SOT-323 1.ANODE 2. NC 3. CATHODE MARKING: Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRM VRRM VRWM VR IFM IO Pd TJ TSTG 700 300 100 125 -55-125 mA mA mW ℃ ℃ 20 V Limits 25 Unit V Forward Continuous Current Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range Electrical Characteristics @TA=25℃ Parameter Reverse Breakdown Voltage Symbol V (BR)R VF1 Forward voltage VF2 VF3 Reverse current Capacitance between terminals IR CT 46 Min. 20 0.16 0.22 0.38 0.45 50 Typ. Max. Unit V V V V uA pF Conditions IR=100μA IF=1mA IF=10mA IF=300mA VR=20V VR=0,f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 1SS4 01 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５