2SA1036

2SA1 036 TRANSISTOR(PNP) FEATURES ∙ Large IC. ICMax.= -500 mA ∙ Low VCE(sat). Ideal for low-voltage operation. SOT-23 1. BASE 2. EMITTER MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -500 200 150 -55-150 Units V V V mA mW ℃ ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -40 -32 -5 -1 -1 82 390 -0.4 200 7 V MHz pF TYP MAX UNIT V V V μA μA IC=-100μA,IE=0 IC=-1mA,IB=0 IE=-100μA,IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-10mA IC=-100mA,IB=-10mA VCE=-5V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range hFE P 82 - 180 Q 120 - 270 R 180 - 390 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 0 3 6 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５