2SA1037

2SA1 037 TRANSISTOR(PNP) FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value -60 -50 -6 150 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -60 -50 -6 -0.1 -0.1 120 560 -0.5 140 4.0 5.0 V MHz pF TYP MAX UNIT V V V μA μA IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz CLASSIFICATION OF Rank Range hFE Q 120 - 270 R 180 - 390 S 270 - 560 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 0 3 7 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５