2SA1162

2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter 1. BASE 2. EMITTER 3. COLLECTOR Value -50 -50 -5 -150 150 125 -55-125 Units V V V mA mW ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions MIN -50 -50 -5 -0.1 -0.1 70 400 -0.3 80 7 10 V MHz pF dB TYP MAX UNIT V V V uA uA IC=-100u A,IE=0 IC=-1mA,IB=0 IE=-100 u A,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-2mA IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA VCB=-10V,IE=0,f=1MHz VCE=-6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ CLASSIFICATION OF Rank Range hFE O 70-140 Y 120-240 GR(G) 200-400 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 1 62 ypical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５