2SA1179

2SA1 1 7 9 TRANSISTOR(PNP) FEATURES . High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Pc TJ Tstg Parameter Value -55 -50 -5 -150 200 150 -55-150 Units V V V mA mW ℃ ℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions MIN -55 -50 -5 -0.1 -0.1 200 400 -0.5 -1.0 180 4 V V MHz pF TYP MAX UNIT V V V uA uA IC=-10u A,IE=0 IC=-1mA,IB=0 IE=-10 u A,IC=0 VCB=-35V,IE=0 VEB=-4V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA IC=-50mA,IB=-5mA VCE=-6V,IC=-10mA VCB=-6V,IE=0,f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 1 7 9 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５