2SA1201

2SA1 201 TRANSISTOR(PNP) FEATURES High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Value -120 -120 -5 -0.8 0.5 150 -55-150 Units V V V A W ℃ ℃ Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions MIN -120 -120 -5 -0.1 -0.1 80 240 -1 -1 120 30 V V MHz pF TYP MAX UNIT V V V μA μA IC=-1mA,IE=0 IC=-10mA,IB=0 IE=-1mA,IC=0 VCB=-120V,IE=0 VEB=-5V,IC=0 VCE=-5V,IC=-100mA IC=-500mA,IB=-50mA VCE=-5V,IC=-500mA VCE=-5V,IC=-100mA VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking １　 JinYu hFE O 80-160 DO Y 120-240 DY semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 201 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５