2SA1213

2SA1 21 3 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES Complementary to 2SC2873 Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -50 -50 -5 -2 500 250 150 -55~+150 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob fT Test conditions Min -50 -50 -5 -100 -100 70 20 -0.5 -1.2 40 100 V V pF MHz 240 Typ Max Unit V V V nA nA IC= -0.1mA,IE=0 IC=-10mA,IB=0 IE=-0.1mA,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-2A IC=-1A,IB=-50mA IC=-1A,IB=-50mA VCB=-10V,IE=0, f=1MHz VCE=-2V,IC= -0.5A CLASSIFICATION OF hFE RANK RANGE MARKING O 70–140 NO Y 120–240 NY １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５