2SA1235A

2SA1 235A TRANSISTOR(PNP) SOT–23 FEATURES  Low Collector Current  Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -6 -200 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test conditions Min -60 -50 -6 -100 -100 150 90 -0.3 -1 200 4 V V MHz pF 500 Typ Max Unit V V V nA nA IC=-100μA, IE=0 IC=-0.1mA, IB=0 IE=-100μA, IC=0 VCB=-60V, IE=0 VEB=-6V, IC=0 VCE=-6V, IC=-1mA VCE=-6V, IC=-0.1mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V,IC=-10mA VCB=-6V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING M·E 150–300 M·E M·F 250–500 M·F １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５