2SA1298

2SA1 298 TRANSISTOR(PNP) SOT–23 FEATURES  Low Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -35 -30 -5 -800 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Min -35 -30 -5 -0.1 -0.1 100 40 -0.5 -0.8 -0.5 120 13 V V MHz pF 320 Typ Max Unit V V V μA μA IC=-1mA, IE=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-500mA, IB=-20mA VCB=-1V,IC=-10mA, VCE=-5V,IC=-10mA VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING O 100–200 Y 160–320 IO IY １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５