2SA1579

2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -120 -120 -5 -50 100 150 -55-150 Units V V V mA mW ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -120 -120 -5 -0.5 -0.5 180 560 -0.5 140 3.2 V MHz pF TYP MAX UNIT V V V μA μA IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-100V,IE=0 VEB=-4V,IC=0 VCE=-6V,IC=-2mA IC=-10mA,IB=-1mA VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking １　 JinYu hFE R 180-390 RR S 270-560 RS semiconductor www.htsemi.com 2SA1 5 7 9 Typical Characteristics ２ JinYu semiconductor www.htsemi.com