2SA1661

2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES Small Flat Package High Current Application High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -120 -120 -5 -0.8 500 250 150 -55~+150 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE Cob fT Test conditions Min -120 -120 -5 -100 -100 80 240 -1 -1 30 120 V V pF MHz Typ Max Unit V V V nA nA IC= -1mA,IE=0 IC=-10mA,IB=0 IE=-1mA,IC=0 VCB=-120V,IE=0 VEB=-5V,IC=0 VCE=-5V, IC=-100mA IC=-500mA,IB=-50mA VCE=-5V, IC=-500mA VCB=-10V,IE=0, f=1MHz VCE=-5V,IC=-0.1A, f=30MHz CLASSIFICATION OF hFE RANK RANGE MARKING O 80–160 DO. Y 120–240 DY. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５