2SA1662

2SA1662 TRANSISTOR (PNP) FEATURES Complementary to KTC4374 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -0.4 0.5 150 -55-150 Units V V V A W ℃ ℃ 3. EMITTER SOT-89 1. BASE 2. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test IC=-1mA,IE=0 IC=-10mA,IB=0 IE=-1mA,IC=0 VCB=-80V,IE=0 VEB=-5V,IC=0 VCE=-2V,IC=-50mA VCE=-2V,IC=-200mA IC=-200mA,IB=-20mA VCE=-2V,IC=-5mA VCE=-10V,IC=-10mA VCB=-10V,IE=0,f=1MHz -0.55 120 14 70 40 -0.4 -0.8 V V MHz pF conditions MIN -80 -80 -5 -0.1 -0.1 240 TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range Marking hFE(1) O 70-140 FO Y 120-240 FY １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1662 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５