2SA1873

2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features Small package (dual type) High voltage and high current High hFE Excellent hFE linearity Complementary to 2SC4944 MARKING: SY SGR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value -50 -50 -5 -150 200 150 -55 to150 Units V V V mA mW ℃ ℃ SOT-353 1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions Min -50 -50 -5 -0.1 -0.1 120 400 -0.3 80 7 V MHz pF Typ M ax Unit V V V μA μA IC=-100μA,IE=0 IC=-1mA,IB=0 IE=-10μA,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-2mA IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking hFE Y 120-240 SY GR 200-400 SGR 1 JinYu semiconductor www.htsemi.com Date:2011/ 05