2SB1119

2SB1 1 1 9 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES Small Flat Package LF Amplifier, Electronic Governor Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -25 -25 -5 -1 500 250 150 -55~+150 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) Cob fT Test conditions Min -25 -25 -5 -100 -100 100 40 -0.7 -1.2 25 180 V V pF MHz 560 Typ Max Unit V V V nA nA IC=-10µA,IE=0 IC=-1mA,IB=0 IE=-10µA,IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-500mA,IB=-50mA IC=-500mA,IB=-50mA VCB=-10V,IE=0, f=1MHz VCE=-10V,IC=-50mA, CLASSIFICATION OF hFE(1) RANK RANGE MARKING R 100–200 S 140–280 BB T 200–400 U 280–560 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５