2SB1132

2SB1 1 32 TRANSISTOR (PNP) FEATURES Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA Compliments 2SD1664 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -1 500 150 -55-150 Units V V V A mW ℃ ℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -40 -32 -5 -0.5 -0.5 82 -0.2 150 20 30 390 -0.5 V MHz pF TYP MAX UNIT V V V μA μA IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-100mA IC=-500mA,IB=-50mA VCE=-5V,IC=-50mA,f=30MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF hFE Rank Range Marking P 82-180 BAP Q 120-270 BAQ R 180-390 BAR １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 1 32 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 1 32 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５