2SB1188

2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 FEATURES Low VCE(sat). Complements the 2SD1766 1. BASE 1 2. COLLECTOR 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Value -40 -32 -5 -2 500 150 -55-150 Units V V V A mW ℃ ℃ Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain * Collector-emitter saturation voltage * Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions MIN -40 -32 -5 -1 -1 82 390 -0.8 100 50 V MHz pF TYP MAX UNIT V V V μA μA IC=-50μA , IE=0 IC= -1mA , IB=0 IE=-50μA, IC=0 VCB=-20 V , IE=0 VEB=-4 V , VCE=-3V, IC=0 IC= -0.5A IC=-2A, IB= -0.2A VCE=-5V, IC=-0.5A ,f=30MHz VCB=-10V, IE=0 ,f=1MHz fT Cob OF hFE P 82-180 BCP * Measured using pulse current. CLASSIFICATION Rank Range Marking １　 JinYu Q 120-270 BCQ R 180-390 BCR semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 1 8 8 Typical Characteristics ２ JinYu www.htsemi.com